2002
DOI: 10.1103/physrevb.66.121102
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Coulomb pseudogap caused by partial localization of a three-dimensional electron system in the extreme quantum limit

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Cited by 13 publications
(10 citation statements)
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“…We note that our theoretical results are consistent with available data on scanning tunneling microscopy in disordered interacting systems, in particular, for a strongly disordered 3D system [68], for various 2D semiconductor systems and graphene [69][70][71][72], for a magnetic semiconductor Ga 1−x Mn x As near metal-insulator transition [9], for metallic and insulating phases near superconductorinsulator transition in TiN, InO, and NbN films [73][74][75][76][77][78].…”
Section: Pacssupporting
confidence: 77%
“…We note that our theoretical results are consistent with available data on scanning tunneling microscopy in disordered interacting systems, in particular, for a strongly disordered 3D system [68], for various 2D semiconductor systems and graphene [69][70][71][72], for a magnetic semiconductor Ga 1−x Mn x As near metal-insulator transition [9], for metallic and insulating phases near superconductorinsulator transition in TiN, InO, and NbN films [73][74][75][76][77][78].…”
Section: Pacssupporting
confidence: 77%
“…Strong fluctuations of the LDOS in a strongly disordered 3D system (presumably, on the insulating side of the transition) have been also observed in Ref. [27]. Further, recent works on STM of 2D semiconductor systems and graphene [28] demonstrated the feasibility to explore fluctuations and correlations of the LDOS also near the quantum Hall transitions.…”
mentioning
confidence: 63%
“…Surprisingly, a Coulomb gap-although typically thought of being a phenomenon related to disorder averaging or spatial averaging-is also observed in the local DOS [35]. The intensity of a particular LDOS peak is suppressed when moved through E F by increasing B.…”
mentioning
confidence: 98%