Coulomb blur advantage of a multi-shaped beam lithography approach

Slodowski, Matthias; Doering, Hans-Joachim; Elster, Thomas; Stolberg, Ines A.

doi:10.1117/12.814113

Cited by 6 publications

(10 citation statements)

References 3 publications

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“…Such performance improvements are important; especially with respect to coming technology nodes where new lithographic technologies such as for instance Multi Shaped Beam (MSB) [13] are applied. To demonstrate this, we added during the evaluation phase a test pattern which was processed for MSB.…”

Section: Performance Evaluationmentioning

confidence: 99%

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Latest results and computing performance of the ePLACE data preparation tool

et al. 2009

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At the EMLC 2009 in Dresden the data preparation package ePLACE was already presented. This package has been used for quite different applications covering mask write, direct write and special applications. In this paper we will disclose results achieved when using the ePLACE package for processing of layout data of immediate interest. During the evaluation phase of the new solution we could benefit from broad experience we collected over many years with the fracture performance of the MGS software, which is one core element of today's ePLACE package. A key interest of this paper is the investigation of the scalability of computing solutions as a cost-effective approach when processing huge data volumes with the new solution. This is reflected against current state-of-the-art data processing tasks being part of both mask write and direct write applications. Furthermore, we evaluated visualization and simulation possibilities of the ePLACE package with respect to its use with latest layouts in various applications. The improved performance of the data preparation package including its adaptation to new e-beam lithography options, as, for instance, the incorporation of the cell projection capability or the newly developed Multi Shaped Beam (MSB) technology, will be also discussed. As an example the matching of the data path with a Vistec SB3055 will be outlined. Processing of Design For E-Beam (DFEB) data (including cell contents) and their conversion to real exposure data is reported. The advantages of the parallel use of standard shaped beam und cell projection technologies are highlighted focussing on latest writing time yields achieved when applying the CP feature

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Section: Performance Evaluationmentioning

confidence: 99%

“…At the SPIE Conference 2009 [13] Vistec introduced to the audience a novel multi-beam concept combining the wellknown "standard shape" working principle (see also 4.1) with a large number of beamlets which are individually controllable in size and position and of a maximum size of e.g. 200 nm each.…”

Section: Multi Shaped Beam (Msb)mentioning

confidence: 99%

Latest results and computing performance of the ePLACE data preparation tool

et al. 2009

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“…Beamlets are elements of the multi shaped beam array. The MSB matrix [1] , [2] may, for instance, consist of 8 x 8 beamlets (MSB64) or 16 x 16 beamlets (MSB256). Higher numbers of beamlets are taken into account for Direct Write (DW) applications [8] .…”

Section: Comparison Of Shot Counts and Write Timesmentioning

confidence: 99%

“…Earlier publications explain in detail the working principle of the Vistec Multi Shaped Beam (MSB) technology [1] and demonstrate first lithography results on test and customer patterns [2] . The MSB working principle (see Figure 1) is appropriate for both wafer direct write and photomask write applications.…”

Section: Introductionmentioning

confidence: 99%

Multi-shaped e-beam technology for mask writing

et al. 2010

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Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated [2] . One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes.The present paper describes in detail the working principles and advantages of MSB over VSB for photomask applications. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.

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“…The multi shaped beam approach MSB has been introduced at the SPIE Advanced Lithography conference in 2009 [7] describing the basic method and MSB specific electron-optical simulations. In 2010 first test exposure results, achieved by using a modified standard variable shaped beam tool, have been published [4].…”

Section: Introductionmentioning

confidence: 99%

Multi-shaped beam: development status and update on lithography results

Slodowski

Doering

Dorl

et al. 2011

Alternative Lithographic Technologies III

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According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2,3].In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3,5,6].Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

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Coulomb blur advantage of a multi-shaped beam lithography approach

Cited by 6 publications

References 3 publications

Latest results and computing performance of the ePLACE data preparation tool

Latest results and computing performance of the ePLACE data preparation tool

Multi-shaped e-beam technology for mask writing

Multi-shaped beam: development status and update on lithography results

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