Coulomb Blockade Spectroscopy of a MoS<sub>2</sub> Nanotube

Reinhardt, Simon; Pirker, Luka; Bäuml, Christian; Remškar, Maja; Hüttel, A. K.

doi:10.1002/pssr.201900251

Cited by 14 publications

(18 citation statements)

References 37 publications

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“…Growing single‐layer TMDC nanotube has been quite challenging however, and several experiments have shown synthesis of multiwall nanotubes with diameter ranging from 10 nm to several micrometers (Figure 10b). [ 105,106 ] With nanotubes grown vertically in well defined array, scaling of such devices might be possible as shown in other material systems. [ 107 ] Field effect transistor fabricated from multiwall MoS 2 nanotubes exhibit mobility of 43 cm 2 V −1 s −1 , steep sub‐threshold slope of 200 mV dec −1 , a current ON/OFF ratio of 10 3 as well as current density 1 µA µm −1 comparable to the etched nanoribbons.…”

Section: Tmdc‐based Qubitsmentioning

confidence: 99%

“…However, Coulomb blockade in a multilayer MoS 2 nanotube has been demonstrated (Figure 11c). [ 105 ] Observed Coulomb blockade in both nanoribbon and nanotube devices are thus far due to accidental formation of quantum dots typically attributed to either external environment factors, intrinsic material system nuances, or combination of both. External environmental sources resulting in quantum dot originate from outside the material system and may include trap states (defects) in the SiO 2 substrate, [ 114,115 ] residues from the fabrication process, [ 116 ] and dirt on the TMDC material.…”

Section: Tmdc‐based Qubitsmentioning

confidence: 99%

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Toward Valley‐Coupled Spin Qubits

et al. 2020

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The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin‐based qubits in solid‐state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid‐state spin qubits as residual spins from substrate, dielectric, electrodes, or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley‐coupled spins in monolayer transition metal dichalcogenides. Such valley‐coupled spins are protected by inversion asymmetry and time reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up‐to‐date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin‐valley qubits.

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Section: Tmdc‐based Qubitsmentioning

confidence: 99%

Section: Tmdc‐based Qubitsmentioning

confidence: 99%

Toward Valley‐Coupled Spin Qubits

et al. 2020

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“…Gate-defined QDs have been demonstrated in WSe2 [190,191] , WS2 [192] , and MoS2 [193][194][195] monolayers and MoS2 nanotubes [196] . Fig 4c depicts an example of a gate-defined QD in WSe2 sandwiched between layers of hBN.…”

Section: Transition Metal Dichalcogenide (Tmd) Qdsmentioning

confidence: 99%

Nanomaterials for Quantum Information Science and Engineering

et al. 2022

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Quantum information science and engineering (QISE) which entails generation, control and manipulation of individual quantum mechanical states together with nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk material as their constituents. In this review, we consider how nanomaterials or low-dimensional materials i.e. materials with intrinsic quantum confinement -may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials-based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

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“…TMD single quantum dots defined by gates have been reported for multi-layer WSe 2 and WS 2 [36,37] and fewlayer MoS 2 [38][39][40], and a double quantum dot has been reported in multilayer MoS 2 [41]. Additionally, excited states have been observed in a dot defined in a MoS 2 nanotube [42], and size-controlled dots have also been formed in etched MoS 2 [43]. All two-dimensional TMD quantum dot devices reported so far have operated in a so-called * churchill@uark.edu classical limit, ∆ < k B T , in which the individual quantum states required to define an eventual qubit were not resolved [44].…”

Section: Introductionmentioning

confidence: 99%

Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$

Davari,

Stacy,

Mercado

et al. 2020

Preprint

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We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2. The devices were operated with gates above and below the WSe2 layer to accumulate a hole gas, which for some devices was then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb blockade regime is consistent with transport through a single level, and excited state transport through the dots was observed at temperatures up to 10 K. For adjacent charge states of a bilayer WSe2 dot, magnetic field dependence of excited state energies was used to estimate g-factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe2 for application as qubits.

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Coulomb Blockade Spectroscopy of a MoS₂ Nanotube

Cited by 14 publications

References 37 publications

Toward Valley‐Coupled Spin Qubits

Toward Valley‐Coupled Spin Qubits

Nanomaterials for Quantum Information Science and Engineering

Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$

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Coulomb Blockade Spectroscopy of a MoS2 Nanotube

Cited by 14 publications

References 37 publications

Toward Valley‐Coupled Spin Qubits

Toward Valley‐Coupled Spin Qubits

Nanomaterials for Quantum Information Science and Engineering

Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe$_2$

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Product

Resources

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Coulomb Blockade Spectroscopy of a MoS₂ Nanotube