Cotunneling and one-dimensional localization in individual disordered single-wall carbon nanotubes: Temperature dependence of the intrinsic resistance

Abstract

We report on the temperature dependence of the intrinsic resistance of long individual disordered single-wall carbon nanotubes. The resistance grows dramatically as the temperature is reduced, and the functional form is consistent with an activated behavior. These results are described by a Coulomb blockade along a series of quantum dots. We occasionally observe a kink in the activated behavior that reflects the change of the activation energy as the temperature range is changed. This is attributed to charge hopping events between nonadjacent quantum dots, which is possible through cotunneling processes.

Analysis and simulation of the electrical properties of CNTs/epoxy nanocomposites for high performance composite matrices

“…The calculated values of the nanocomposite conductivity are about four orders of magnitude higher than the experimental ones. This rather large deviation can be explained by the formation of a thin polymer layer between nanotubes preventing the contact . Due to existence of this layer the distance between the contacting nanotubes can exceed the 3.4 Å supposed in the model.…”

Measurements of the transport gap in semiconducting multiwalled carbon nanotubes with varying diameter and length

“…We can conclude that this estimate supports the argument that at lengths 1 μm, the residual conduction within the transport gap involves strong localization phenomena. We note here that the alternative model of serial Coulomb blockade, which has been utilized to explain the transport gap in GNRs, also has been forwarded to describe strongly resistive low temperature transport in SWNTs [50].…”

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

“…Under these conditions, localization effects and the electronic separation of the CNT into a series of charge puddles can strongly affect the measured transport properties. 26,27 Since most of the devices contain several CNT, 10% of which are metallic, we can also access these effects. At room temperature, the presence of any metallic CNT leads to a constant offset of the conductivity versus V gd bias, resulting in a non-zero I sd current in the OFF state (positive V gd bias).…”