Cost‐effective all‐semiconductor 4 × 40 Gbit/s transmission in the 1310‐nm wavelength domain

Abstract

Error‐free transmission of 4 × 40 Gbit/s over 50 km of standard single mode fiber in the 1310‐nm wavelength domain is demonstrated. The obtained results prove applicability of the 1310‐nm wavelength domain to support the cost‐effective medium range high capacity transmission systems, e.g., future 400 Gbit/s Ethernet standard. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26065

Towards 1 Tbit/s SOA based 1310 nm transmission for LAN/Data center applications

“…Fig. 2A shows the measured gain in the function of wavelength of the 1310 nm SOA utilized in the transmission experiments like [9][10][11]. The 1 dB SOA amplification bandwidth is about 40 nm.…”

“…The 1 dB SOA amplification bandwidth is about 40 nm. However, in the demonstrated SOA based transmission experiments the wavelength channels were allocated from the maximum gain to the longer wavelengths [9,14]. One of the reasons for such channel allocation is the fact, that SOA saturates faster for the shorter wavelengths and this phenomenon is shown in the Fig.…”

“…1 Tbit/s transmission in such limited wavelength band. Especially that the wide channel spacing will be required to minimize influence of the four-wave mixing (FWM) effect [9]. penalty transmission distance.…”

“…However, the recent developments of the 1310 nm components and transmission techniques [2][3][4][5][6][7][8][9][10][11] create a solid component base for the extended utilization of the 1310 nm wavelength domain.…”

Towards 1 Tbit/s SOA‐based 1310 nm transmission for local area network/data centre applications

“…Currently, utilisation of the 1310 nm wavelength domain is limited to the 100 Gbit/s Ethernet standard (wavelength multiplexed 4 × 25 Gbit/s transmission) [1], upstream channel in the passive optical network systems and a few coarse wavelength division multiplexing channels. The recent developments of the 1310 nm components and transmission techniques, for example, the hybrid silicon 67 GHz EAM, direct modulation of the distributed Bragg reflector laser at the bit rate of 50 Gbit/s, the distributed feedback (DFB) laser integrated with an EAM operating at 50 Gbit/s, the integrated electroabsorption modulator integrated with distributed feedback laser (EADFB) transmitter subassemblies with the bit rate of 4 × 40 Gbit/s, as well as available 100 GBase ER4 standard compliant electroabsorption modulated laser diodes (EML) chips [2][3][4][5][6][7][8][9][10][11], create a solid component base for the extended utilisation of the 1310 nm wavelength domain.…”