Cosmic ray immunity of COTS Normally-Off Power GaN FETs for space, aeronautic and automotive applications

Zerarka, Moustafa; Crépel, Olivier; Weulersse, C.; Morand, S.; Binois, C.; Mazurek, M.; Vignon, G.; Serrano, L.; Coccetti, F.

doi:10.1109/radecs50773.2020.9857695

Cited by 6 publications

(2 citation statements)

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“…In comparison with SP-HEMTs and HD-GITs, testing of 650 V Cascode devices showed significantly reduced VSEB, at 100 V under 48.5 MeVcm 2 /mg in [277] and 40 V under 28.5 MeVcm 2 /mg in [278]. A range of experimentally determined V SEB values found in the literature as a function of device voltage and LET of the irradiation is shown in Fig.…”

Section: Single Event Effectsmentioning

confidence: 86%

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: Single Event Effectsmentioning

confidence: 86%

“…Parallel incidence ions are shown to result in failures in which thermal failure destroyed and bridged the gate to the drain contact. A dielectric failure mode in the intermetallic region between source and drain is found in [277] for SP-HEMTs.…”

Section: Single Event Effectsmentioning

confidence: 97%