Cosmic radiation as a cause for power device failure and possible countermeasures

Kabza, H.; Schulze, Holger; Gerstenmaier, Y.C.; Voss, P.; Schmid, Joachim; Pfirsch, F.; Platzoder, K.

doi:10.1109/ispsd.1994.583620

Cited by 63 publications

(38 citation statements)

References 12 publications

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“…Power devices (e.g., BJTs, MOSFETs, and diodes) in space, high altitude, and terrestrial systems are vulnerable to destructive single event burnout (SEB) induced by energetic particles [1][2][3][4]. SEB was first reported in power MOSFETs, and the failure was attributed to the regenerative feedback mechanism that is due to the turn on of a parasitic transistor when a heavy ion strikes the device in the OFF state [1].…”

Section: Introductionmentioning

confidence: 99%

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Single event burnout in power diodes: Mechanisms and models

Albadri

Schrimpf

Galloway

et al. 2006

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

“…Numerous studies have been conducted investigating SEB in power MOSFETs and they were reviewed in reference [5]. Subsequently, power diode vulnerability to SEB was reported [3,4]. The SEB mechanism is different for diodes than for bipolar transistors because of the absence of bipolar gain [6].…”

Section: Introductionmentioning

confidence: 99%

Single event burnout in power diodes: Mechanisms and models

Albadri

Schrimpf

Galloway

et al. 2006

Microelectronics Reliability

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“…The higher the dc-link voltage, the higher is also the maximum electric field within the chosen power module. Due to high electric fields in power modules, it has been shown that another case of failure is due to cosmic radiation [11]. This has even higher impact when the power converter is placed at high altitude [12].…”

Section: Simulation Resultsmentioning

confidence: 99%

Efficiency and reliability improvement in wind turbine converters by grid converter adaptive control

Trintis

Munk‐Nielsen

Abrahamsen³

et al. 2013

2013 15th European Conference on Power Electronics and Applications (EPE)

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“…With this voltage applied between the cathode and the anode, the resulting extent of the space charge region is 1.2 mm. Therefore, the density of detrimental defects must be extremely low in this area [2].…”

Section: Introductionmentioning

confidence: 99%

Diffusion-Induced Doping Processes and Defect Kinetics in Power Devices

Schulze

Niedernostheide

Bauer³

et al. 2005

Mat.-wiss. u. Werkstofftech.

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The fabrication of high-power devices requires the creation of deep p-n junctions-typically deeper than 100 lm-, uniform and localized carrier lifetime control, and efficient gettering processes. It is shown how these processes and their interactions influence the device characteristics, and how the processes can be optimized for high-power device technology. Concerning the creation of deep ptype and n-type layers the focus is on deep diffusion processes of aluminum that can be used to generate even laterally structured deep p-type layers, and proton implantation with a subsequent annealing step that provides a proper means to create deep n-type layers.Keywords: deep diffusion; carrier lifetime; hydrogen-related donor formation; power devices; gettering Schlüsselprozesse bei der Herstellung von Leistungshalbleiterbauelementen mit sehr hoher Sperrspannung sind Prozesse zur Herstellung von tiefen pn-Ü bergängen (typischerweise > 100 lm), die gezielte Einstellung von Ladungsgträgerlebensdauerprofilen und effiziente Getterprozesse. Wir zeigen, wie diese Prozesse und ihre gegenseitige Wechselwirkung die Bauelementecharakteristiken beeinflusst und wie sie optimal eingesetzt werden können. Schwerpunkte bei der Betrachtung tiefer pn-Ü bergängen liegen auf der Diffusion von Aluminium und der wasserstoffinduzierten Donatorbildung.

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Cosmic radiation as a cause for power device failure and possible countermeasures

Cited by 63 publications

References 12 publications

Single event burnout in power diodes: Mechanisms and models

Single event burnout in power diodes: Mechanisms and models

Efficiency and reliability improvement in wind turbine converters by grid converter adaptive control

Diffusion-Induced Doping Processes and Defect Kinetics in Power Devices

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