Corrugated quantum well infrared photodetectors for normal incident light coupling

Chen, C. J.; Choi, K. K.; Tidrow, Meimei Z.; Tsui, D. C.

doi:10.1063/1.116249

Cited by 80 publications

(28 citation statements)

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“…1-3 Alternatively, the QW layer can itself be formed into a periodic structure, thus serving as the required grating. 4,5 Because the latter situation is easier to fabricate and exhibits a variety of other advantages, we shall assume that this is the case for illustration purposes.…”

Section: Statement Of the Problem Studiedmentioning

confidence: 99%

Electromagnetic Modelling of Quantum-Well Infrared Photodetectors

Tamir¹

2003

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Section: Statement Of the Problem Studiedmentioning

confidence: 99%

Electromagnetic Modelling of Quantum-Well Infrared Photodetectors

Tamir¹

2003

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“…4,5 Because the latter situation is easier to fabricate and exhibits a variety of other advantages, we shall assume that this is the case for illustration purposes.…”

Section: -3mentioning

confidence: 99%

Electromagnetic Modeling of Quantum-Well Infrared Photodetectors

Tamir¹

2003

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“…12 In the C-QWIP geometry ͓see inset of Fig. 4͔, light is normally incident on the back side of the wafer, suffers total internal reflection at the etched sidewalls, and then, travels parallel to the QWs, leading to intersubband absorption.…”

Section: ϫ3mentioning

confidence: 99%

“…One such scheme is the corrugated-QWIP ͑C-QWIP͒, which requires a thick active layer for large reflecting sidewalls. 12 Therefore, multiple units of the SL pairs are needed for constructing a sensitive C-QWIP. In this letter, we propose and demonstrate a multiple SL structure, whose units are separated by wide layers of heavily doped GaAs, and show that C-QWIPs are indeed capable of coupling wide range of wavelengths for two-color detection.…”

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confidence: 99%

Voltage tunable two-color infrared detection using semiconductor superlattices

Majumdar

Choi

Reno

et al. 2003

Applied Physics Letters

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We demonstrate a voltage tunable two-color quantum-well infrared photodetector ͑QWIP͒ that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 m under large positive bias to 6 m under negative bias. The background-limited temperature is 55 K for 9.5 m detection and 80 K for 6 m detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector. and low operating temperature, 6 respectively. Dipole transitions between energy minibands in superlattices ͑SLs͒ have also been utilized for long-wavelength ͑LW͒ 7-9 and mid-wavelength ͑MW͒ 10 infrared detection. Two-color detection was recently demonstrated using a superlattice infrared photodetector ͑SLIP͒ consisting of two distinct SLs separated by a blocking barrier.11 This structure utilizes the low resistance of SLs and the high resistance of the blocking barriers to avoid most of the above-mentioned problems. Unfortunately, this original design contains only a single SL for each color, which leads to low absorption at both wavelengths. In addition, two-color FPA fabrication necessitates broadband light coupling scheme for normal incidence absorption. One such scheme is the corrugated-QWIP ͑C-QWIP͒, which requires a thick active layer for large reflecting sidewalls.12 Therefore, multiple units of the SL pairs are needed for constructing a sensitive C-QWIP. In this letter, we propose and demonstrate a multiple SL structure, whose units are separated by wide layers of heavily doped GaAs, and show that C-QWIPs are indeed capable of coupling wide range of wavelengths for two-color detection.The multiple SL structure, whose single unit is sketched in Fig. 1͑a͒, consists of four periods of SL pairs cladded by thick n ϩ -GaAs contact layers. Each SL pair comprises of a bottom SL ͑SL1͒ and a top SL ͑SL2͒ with an undoped 600 Å thick linearly graded Al x Ga 1Ϫx As barrier in the middle (x ϭ0.22→0.4 along the growth direction͒. Each SL1/gradedbarrier/SL2 unit is separated from the next unit by a 2000 Å n ϩ -GaAs layer that is uniformly doped with 1ϫ10 18 cm Ϫ3Si donors. SL1 and SL2 are designed for 7-11 m and 4 -7 m detection, respectively. We will refer to these two detection ranges as the LW and the MW range, respectively. SL1 contains four periods of 65 Å GaAs wells and 40 Å Al 0.27 Ga 0.73 As barriers while SL2 consists of four periods of 40 Å GaAs wells and 30 Å Al 0.4 Ga 0.6 As barriers. The middle 35 Å of the GaAs wells in SL1 and the entire 40 Å GaAs wells in SL2 are uniformly doped with 1ϫ10 18 cm Ϫ3 Si donors while the barriers in both the SLs are undoped. The whole structure was grown on a ͑100͒ semi-insulating GaAs substrate by molecular-beam epitaxy.The calculated conduction band diagram and energy levels of one period of the SLIP device at zero bias are shown in Fig. 1͑b͒. Both short-period SLs give rise to minibands M 1 and M 2 that each contain...

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Corrugated quantum well infrared photodetectors for normal incident light coupling

Cited by 80 publications

References 0 publications

Electromagnetic Modelling of Quantum-Well Infrared Photodetectors

Electromagnetic Modelling of Quantum-Well Infrared Photodetectors

Electromagnetic Modeling of Quantum-Well Infrared Photodetectors

Voltage tunable two-color infrared detection using semiconductor superlattices

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