Corrosion of γ-75 at% Manganese-Nickel Alloy in Deaerated Sulfuric Acid Solutions

Burzyńska, L.; Maraszewska, A.; Karp, J.

doi:10.5006/1.3284847

Cited by 1 publication

(1 citation statement)

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“…7 This chemical function of Mn in the context of CMP is also expected in view of the commonly known preferential activity of Mn in its various alloys. [60][61][62] Thus controlling the Mn-specific electrochemistry of Mn based barrier films is an essential factor for designing CMP slurries of these materials. The CMP strategy explored in the present work focuses on the formation (and subsequent removal) of Mn-hydroxide surface species and their complexes with Sal − .…”

Section: Cumentioning

confidence: 99%

Examination of Salicylaldehyde as a Surface Modifier of Manganese for Application in Chemical Mechanical Planarization

Türk

Simpson

Roy

2013

ECS J. Solid State Sci. Technol.

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Mn based self-aligned diffusion barriers are promising for incorporation in the copper interconnects designed for the ≤22 nm technology node. However, in the current metallization scheme of chemical mechanical planarization (CMP), the processing of these barrier lines presents a specific challenge, which is rooted in the intrinsic corrosion characteristics of the Cu-Mn bimetallic couple. Since the Mn component of the self-aligned barrier film is electrochemically active compared to its adjacent Cu lines, the Cu-barrier interface of such a device tends to galvanically corrode in the chemical slurries used for CMP. Employing electrochemical techniques and a model galvanic system of polycrystalline Mn and Cu electrodes, the present work focuses on developing a strategic chemical approach to controlling this corrosion. The results demonstrate that, in the alkaline slurry environment (pH = 9–12, frequently used for barrier-CMP), a relatively low concentration (0.5 mM) of salicylaldehyde can minimize the galvanic corrosion of Mn while maintaining the latter's CMP-specific surface activity. The underlying mechanisms of these effects are probed with open circuit potential measurements, voltammetry and impedance spectroscopy.

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