Corrosion Mechanisms of Cu Wire Bonding on Al Pads

Qin, Wentao; Anderson, Harold; Anderson, Tom; Chang, George; Barrientos, Denise

doi:10.1109/ectc.2018.00221

Cited by 17 publications

(4 citation statements)

References 15 publications

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“…8(c), take Cu-Al IMC as an example, the aluminum oxide as the protection layer is broken down and new IMCs formed. Various patents are proposed to improve performance such as the "integrated passive stacking for RFICs and MEMS in a system-in-package" by Liang et al [151] . The patent provides a high level of circuit integration in a single molded package to improve device reliability.…”

Section: In Situ Study Of Memory Packagementioning

confidence: 99%

A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

et al. 2021

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Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism and packaging reliability issues in NVMs are of great research interest. The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle. Transmission electron microscopy (TEM) with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology, structures and chemical compositions at atomic scale. The various external stimuli, such as thermal, electrical, mechanical, optical and magnetic fields, provide a platform to probe and engineer NVM devices inside TEM in real-time. Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution. This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package. In this review, the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced, with intermetallic compounds forming and degradation process investigated. The principles and challenges of TEM technology on NVM device study are also discussed.

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Section: In Situ Study Of Memory Packagementioning

confidence: 99%

A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

et al. 2021

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“…Semiconductor chips go through the packaging process, which entails creating a mechanism for them to send and receive signals and make them safe and protected from various environmental factors [1]. There are several ways to electrically connect the semiconductor chips and substrates, including wire bonding, flip chip bonding, and through silicon [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…As these cracks propagate to the center of the bond, they accelerate the crack growth due to crevice corrosion, causing the separation of the wire and pad [8,13,26]. This separation depends on the growth rate and characteristics of the IMC generated between the wire and the Al bond pad [5,34]. The IMC is formed by mutual diffusion between the ball and the Al pad at the temperature generated during the bonding process [26].…”

Section: Introductionmentioning

confidence: 99%

“…However, Cu-Al intermetallic compounds are more reliable at high temperatures than Au wires due to less void formation [22]. IMC formed between the Cu wire and the Al pad has a potential between Cu and Al, and the passivation film is not stable, forming a sacrificial anode at the interface of the wire and Al, which is preferentially corroded [5,6,13,38].…”

Section: Introductionmentioning

confidence: 99%

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Influence of HCl Concentration on Corrosion Behavior between Au or Cu Bonding Wires and the Bond Pad for Semiconductor Packaging

Yoo,

Kim,

Jeon

et al. 2023

Materials

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Wire bonding, one of the methods for electrically connecting a semiconductor chip with a substrate, involves attaching thin metal wires to pads. It is the oldest electrical connection method that exhibits high compatibility with other processes. The metal wires used for electrical connection in wire bonding are mainly made of Au, Cu, and Ag. After the wire bonding, molding is performed using the epoxy molding compound (EMC). However, EMC inevitably contains ions such as halogen elements. In addition, it absorbs moisture due to its hydrophilicity, creating a corrosive environment with electrolytes. In this study, we evaluated the influence of hydrochloric acid concentration on corrosion behavior between Au or Cu bonding wires and sputtered Al bond pads. The electrochemical factors such as corrosion potential difference (ΔE), galvanic corrosion current density (ig), and anodic and cathodic Tafel slopes were found to influence galvanic corrosion behavior. Galvanic corrosion tendency in first bond and second bond areas of PCB unit specimen was confirmed.

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