Corrigendum to “Crater functions for compound materials: A route to parameter estimation in coupled-PDE models of ion bombardment” [Nucl. Instr. Meth. Phys. Res. B 318B (2014) 245–252]

Norris, Scott A.; Samela, Juha; Vestberg, Matias; Nordlund, K.; Aziz, Michael J.

doi:10.1016/j.nimb.2015.02.053

Cited by 5 publications

(7 citation statements)

References 5 publications

(4 reference statements)

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“…This also provides unprecedented granularity of understanding, as the crater function, and hence, the moments, can be broken down into contributions from sputtered atoms, redistributed atoms, and implanted ions, each of which can be further divided by atomic species. 118,124,125 Nevertheless, despite these advantages, the crater function framework has important limitations of its own.…”

Section: Discussion and Open Questionsmentioning

confidence: 99%

Ion-induced nanopatterning of silicon: Toward a predictive model

Norris

Aziz

2019

Applied Physics Reviews

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We review recent progress toward the development of predictive models of ion-induced pattern formation on roomtemperature silicon, with a particular emphasis on efforts to eliminate fit parameters in the linear regime by means of experimental measurements or atomistic simulations. Analytical approaches considered include "mechanistic" models of the impactinduced collision cascade, the Crater Function Framework, and continuum treatments of ion-induced stress and viscous flow. Parameter evaluation methods include molecular dynamics and binary collision approximation simulations, as well as wafer curvature measurements and grazing incidence small-angle x-ray scattering. Mathematical detail is provided in the context of key results from pattern formation theory, which are also briefly summarized.

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Section: Discussion and Open Questionsmentioning

confidence: 99%

Ion-induced nanopatterning of silicon: Toward a predictive model

Norris

Aziz

2019

Applied Physics Reviews

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“…In an effort to test the BS theory, Norris and co-workers extended their CFF to binary materials. 31 They then performed MD simulations to find the craters produced by argon ion bombardment of GaSb and input the results into their CFF. The resulting estimated parameter values do not lead to the formation of ordered arrays of nanodots in the BS model.…”

Section: B Binary Materialsmentioning

confidence: 99%

“…43 Norris et al neglected the curvature dependence of the crater function in extending their CFF to binary target materials. 31 Accordingly, it is possible that the errors in their estimated parameter values are quite large, and that improved estimates would in fact lead to the emergence of ordered arrays of nanodots from the BS model. Additional analytical work is needed in which the curvature dependence of the crater function is taken into account when the CFF is extended to binary materials.…”

Section: B Binary Materialsmentioning

confidence: 99%

“…The dependence of the crater on the shape of the surface has also been neglected in more recent applications of the CFF. 31,32 In this paper, we extend the CFF so that it includes the dependence of the crater function on the curvature of the surface at the point of impact. We give explicit expressions for the coefficients in the equation of motion which reduce to the expressions given by Norris et al 21 if the curvature dependence of the crater function is neglected.…”

Section: Introductionmentioning

confidence: 99%

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Crater function approach to ion-induced nanoscale pattern formation: Craters for flat surfaces are insufficient

Harrison

Bradley²

2014

Phys. Rev. B

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In the crater function approach to the erosion of a solid surface by a broad ion beam, the average crater produced by the impact of an ion is used to compute the constant coefficients in the continuum equation of motion for the surface. We extend the crater function formalism so that it includes the dependence of the crater on the curvature of the surface at the point of impact. We then demonstrate that our formalism yields the correct coefficients for the Sigmund model of ion sputtering if terms up to second order in the spatial derivatives are retained. In contrast, if the curvature dependence of the crater is neglected, the coefficients can deviate substantially from their exact values. Our results show that accurately estimating the coefficients using craters obtained from molecular dynamics simulations will require significantly more computational power than was previously thought.

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“…While below T c ion beam pattern formation of III-V semiconductors is driven by composition modulations 12,[20][21][22][23] , ion beam pattern formation above T c is dominated by surface defect creation and diffusion 9,18,24,25 . Above T c extremely ordered faceted ripples form on GaAs(001) as recently reported 8,9 .…”

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Nano patterns self-aligned to Ga dimer rows on GaAs surfaces

Engler¹,

Škereň²,

Facsko³

2016

Preprint

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Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material dependent dynamic recrystallization temperature however, the surface remains crystalline and ion beam irradiation produces regular arrays of faceted ripples on III-V semiconductors. This provides a powerful single-step technique for the production of nanostructures on a large area. On (001) surfaces these ripples are parallel to the [1 10] direction without any external anisotropy. The origin of this self-alignment was not fully understood until now. A simple experiment exposing the front side and back side of a GaAs(001) wafer to the ion beam clarifies its origin and proves that

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Corrigendum to “Crater functions for compound materials: A route to parameter estimation in coupled-PDE models of ion bombardment” [Nucl. Instr. Meth. Phys. Res. B 318B (2014) 245–252]

Cited by 5 publications

References 5 publications

Ion-induced nanopatterning of silicon: Toward a predictive model

Ion-induced nanopatterning of silicon: Toward a predictive model

Crater function approach to ion-induced nanoscale pattern formation: Craters for flat surfaces are insufficient

Nano patterns self-aligned to Ga dimer rows on GaAs surfaces

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