Corrigendum to “Confinement-free annealing induced ferroelectricity in Hf0·5Zr0.5O2 thin films” [Microelectron. Eng. 147 (2015) 15–18]

Low temperature plasma‐enhanced ALD TiN ultrathin films for Hf0.5Zr0.5O2‐based ferroelectric MIM structures

“…The comprehensive electrical investigations of Gd:HfO 2 structures supplemented by the electrical modeling have shown that the interfacial layers between the ferroelectric films and the electrode can strongly affect the wake‐up processes . Moreover, such ultrathin electrode can be transparent for residual oxygen in the annealing chamber, which could possibly reduce the orthorhombic phase fraction because of the reduced number of oxygen vacancies in the ferroelectric film . Noteworthy, the electrical pulse duration, applied to the described MFM structure, was rather long (3 ms) because of the high top electrode resistivity, which could also influence the resulted characteristics .…”

“…According to the available data the appearance of the ferroelectricity is caused by the stabilization of orthorhombic phase under doping and thermal treatment, while one of the most promising HfO 2 ‐based ferroelectrics is Hf 0,5 Zr 0,5 O 2 due to a rather high remnant polarization value and low crystallization temperature, even at low thickness (down to 2.5 nm) . Nevertheless, it was reported that its ferroelectric properties can be strongly dependent on the type of thermal treatment and the electrode material . The maximum value of the remnant polarization as high as ≈32 μC cm −2 was achieved after the top TiN CVD process at 450–500 °C or the physical TiN sputtering (PVD) with subsequent annealing at 400–500 °C .…”

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

“…[9][10][11][12][13][14][15][16][17] Especially, the HZO thin film can show dielectric (DE), ferroelectric (FE), and field-induced ferroelectric (FFE) characteristics depending on the thickness and Zr composition. [9][10][11][12][13][14][15][16][17] The FE The field-induced ferroelectric Hf 1-x Zr x O 2 (FFE-HZO) thin film is investigated for use as the capacitive layer in the future dynamic random access memory (DRAM). Although the dielectric permittivity of FFE-HZO is as high as ≈80, a high electric field (4 MV cm −1 ) is needed to activate the FFE mechanism and the accompanying high dielectric permittivity value.…”

“…As a result, numerous high-k materials have been investigated for use as dielectric films for properties usually observed for the ≈50% Zr contents over ≈10 nm thickness are not suitable for the capacitive layer in DRAM because much of the stored charge is retained within the capacitor as the remanent polarization (P r ) even when the capacitor voltage has been removed. [9][10][11][12][13][14][15][16][17] (The non-switching performance and related dielectric permittivity of the FE 10 nm thick Hf 0.5 Zr 0.5 O 2 film are included in Figure S1, Supporting Information (SI). There was a minimum involvement of the hysteresis in the non-switching P-V curve, and the extracted k value of the non-switching behavior was ≈25 within the electric field region from −4 to 4 MV cm −1 .…”

“…In the Zr-rich HZO material, the non-polar phase is most probably the t-phase with a centrosymmetric crystal structure. [9][10][11][12][13][14][15][16][17] Recently, Park et al reported that the HfO 2 -ZrO 2 solid solution at the boundary between AFE and FE (morphotropic phase boundary) could show k values higher than those of the other phases. [19] They also reported that the HZO films with a specific Hf:Zr ratio showed an increasing k value with decreasing t phy in their study, in stark contrast to the conventional higher-k films, such as SrTiO 3 .…”