Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology 32 055702)

Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives

“…To reduce the operating voltages as well as to enhance the hole injection toward the MQWs, we need highly conductive p-AlGaN HSL including p-AlGaN contact layer as well as p-MQB EBL, by using Al-graded polarizability effect assisted by rapid-thermalannealing (RTA). [49,[52][53][54][55][56][57][58] The hole concentration "p" depends on the acceptor energy level in the exponential fashion as:p % exp À E A kT À Á , where k: Boltzmann constant, T: absolute temperature, and E A : activation energy level (ranging in 240-590 meV) in the p-AlGaN HSL, shown in Figure 10A. [49] .…”

“…Recently, ELA of ion implanted semiconductor materials [54] has been received a great interest within the semiconductor community for its possible application to the formation of ultra-shallow junctions in semiconductor devices. [56,58] Historically speaking, low-energy-electron-beam irradiation (LEEBI) treatment, [55] ELA treatment, [56] and laserinduced local activation (LILA), [57] were performed for the activation of Mg-dopants in the p-GaN as well as for the activation of n-/p-contact on p-/n-GaN contact layers. Recently, we successfully achieve high hole density in the Al-graded p-AlGaN HSL for UVB emitters, where the hole-trap level appeared to have been effectively suppressed by ELA treatment, and a reasonably improved hole concentration up to 2 Â 10 16 cm À3 was generated with reduced resistivity of 24 Ω cm by polarization-assisted mechanism in the lightly polarized n-AlGaN HSL at RT.…”

“…Recently, we successfully achieve high hole density in the Al-graded p-AlGaN HSL for UVB emitters, where the hole-trap level appeared to have been effectively suppressed by ELA treatment, and a reasonably improved hole concentration up to 2 Â 10 16 cm À3 was generated with reduced resistivity of 24 Ω cm by polarization-assisted mechanism in the lightly polarized n-AlGaN HSL at RT. [58] However, this value of hole density is still insufficient for high EQE in UVA LEDs and LDs, shown in Figure 10A. The choice of alternative materials for p-type HSL and contact layers in the nitride UV emitters must satisfy the criteria: 1) Structure and materials system must be compatible with AlGaN and AlN growth (so that single epi-growth is possible).…”