Correspondence - Dynamic leakage current compensation revisited

Schenk, Tony; Schroeder, Uwe; Mikolajick, Thomas

doi:10.1109/tuffc.2014.006774

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…It should be emphasized that the polarization value obtained here for quantitative analysis are susceptible to the practical limitations of the DLCC method. 31,32 Further discussion on this can be found in the Supporting Information. To test the fatigue behavior, we applied bipolar rectangular pulses of 4 V amplitude with a frequency of 100 kHz to the top electrode, and switchable polarization was measured as a function of the applied number of cycles.…”

Section: Experimental Methodsmentioning

confidence: 99%

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Kale

Petraru

Kohlstedt

et al. 2022

ACS Appl. Electron. Mater.

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Spontaneous polarization switchable by the externally applied electric field in ferroelectrics is a crucial feature for its technological applications; however, the reduction in switchable polarization due to bipolar electric cycling primarily hampers its potential application in nonvolatile memory. Among others, electric-field-controlled polarization recovery would be highly desirable from fundamental and technological viewpoints. In spite of recent progress in electrically controlled polarization recovery, polarization reversal behavior in fatigued and recovered states, associated device resistance change, and repeatability and reproducibility of fatigue–recovery cycles remain poorly understood. This study provides an in-depth insight into the recovery of fatigued polarization by an electric field for epitaxially grown Pb(Zr0.3Ti0.7)O3 thin film capacitor with oxide electrodes. Systematic analysis of time- and field-dependent polarization switching kinetics in pristine, fatigued, and recovered states using a suitable statistical model enabled the precise extraction of microscopic switching parameters such as mean characteristic switching times and effective activation fields. Our results demonstrate that fatigue and recovery are possibly mediated by domain pinning–depinning because of defect redistribution and trapping–detrapping of charges at nonelectroneutral domain walls. In addition, the consecutive fatigue–recovery cycles elucidate the repeatability and applicability of electric field controlled polarization recovery in ferroelectric capacitors.

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Section: Experimental Methodsmentioning

confidence: 99%

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Kale

Petraru

Kohlstedt

et al. 2022

ACS Appl. Electron. Mater.

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“…The inset of Fig. 1(d technique introduced in [26] with two PV loops taken at 25 kHz and 50 kHz. HZO film properties are also strongly influenced by the template on which it is grown.…”

Section: Experiments and Eot Comparisonmentioning

confidence: 99%

Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles

Tan

Liao

Wang

et al. 2021

IEEE Electron Device Lett.

137

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We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high-κ interfacial layer (IL) of thermally grown silicon nitride (SiN x ) and a thin 4.5 nm layer of Zr-doped FE-HfO 2 (HZO) on a ∼30 nm silicon on insulator (SOI) channel. The device shows a ∼1V memory window (MW) in a DC sweep of just ± 2.5V, and can be programmed and erased with voltage pulses of V G = ± 3V at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appropriate engineering of the IL layer could substantially improve FeFET device performance and reliability.

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“…To evaluate the leakage contribution to the ferroelectric-like hysteresis, frequency dependent P-E loops are investigated (Figure 3(b)). The loops are not inflated significantly with decreasing the frequency, indicating that the leakage contribution is not large and the polarization after leakage compensation 33 will not be dramatically reduced. To gain more reliable evidence, current response to a voltage stimulation 34 is recorded and presented in Figure 3(c).…”

mentioning

confidence: 98%

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

Fan

Deng

Wang

et al. 2016

Applied Physics Letters

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(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2 thin films. Our theoretical analyses suggest that the strain imposed on the ZrO2 (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO2, and the compressive strain along certain ⟨11-2⟩ directions may further stabilize the o-phase. Experimentally ZrO2 thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO2 thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO2 films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO2 films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.

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Correspondence - Dynamic leakage current compensation revisited

Cited by 12 publications

References 7 publications

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

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Correspondence - Dynamic leakage current compensation revisited

Cited by 12 publications

References 7 publications

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Electrically Controlled Reversible Polarization Fatigue–Recovery in Ferroelectric Thin Film Capacitors

Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

Contact Info

Product

Resources

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Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles