Review paperIn this study, the studies made in the last 10 years about the devices produced by using different metal oxide nano powders were discussed extensively. The effects of the dopping on the electrical properties of photodiodes and photodetectors were investigated. The I-V characteristics of the devices performed under different light intensities were analyzed. In addition, the comparison of electronic parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) and interface state density (Dit) of the thin films produced was investigated. The effect of these parameters on devices is emphasized. In addition, it was investigated to what extent the optoelectronic properties of devices are compatible with the current literature.