2016
DOI: 10.1021/acsenergylett.6b00060
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Correlations between Immobilizing Ions and Suppressing Hysteresis in Perovskite Solar Cells

Abstract: Ion migration has been regarded as the major cause of photocurrent hysteresis. Here we use photoluminescence (PL) and optical images, combined with Galvanostatic measurement, to detect the ionic motion. We observe an irreversible PL and optical transmittance change after electric poling. By comparing a neat perovskite film with the sample coated by poly(methyl methacrylate) (PMMA), polyethylene glycol (PEG), and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), we found that PCBM effectively inhibits ionic mo… Show more

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Cited by 123 publications
(108 citation statements)
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“…In the inset of Figure 4f, the current density (≈22.37 mA cm −2 ) slightly fluctuates during the period of 1000 s. As a result, the stabilized PCE over 19% shows consistency with the calculated values from the measured J-V curves. In addition to the electron transporting layer, the fullerene interlayer can also act as a passivation layer to reduce the interfacial trap states [9,15b] and as a barrier layer to confine I − ion immobilization [21] and avoid the formation of PbI 2 originated from the reaction between iodine ions (I − ) of the perovskite and oxygen vacancies of TiO 2 . In addition to the electron transporting layer, the fullerene interlayer can also act as a passivation layer to reduce the interfacial trap states [9,15b] and as a barrier layer to confine I − ion immobilization [21] and avoid the formation of PbI 2 originated from the reaction between iodine ions (I − ) of the perovskite and oxygen vacancies of TiO 2 .…”
Section: Rigid Pscs Based On Tio 2 and Tio 2 /C 60 Etlsmentioning
confidence: 99%
See 1 more Smart Citation
“…In the inset of Figure 4f, the current density (≈22.37 mA cm −2 ) slightly fluctuates during the period of 1000 s. As a result, the stabilized PCE over 19% shows consistency with the calculated values from the measured J-V curves. In addition to the electron transporting layer, the fullerene interlayer can also act as a passivation layer to reduce the interfacial trap states [9,15b] and as a barrier layer to confine I − ion immobilization [21] and avoid the formation of PbI 2 originated from the reaction between iodine ions (I − ) of the perovskite and oxygen vacancies of TiO 2 . In addition to the electron transporting layer, the fullerene interlayer can also act as a passivation layer to reduce the interfacial trap states [9,15b] and as a barrier layer to confine I − ion immobilization [21] and avoid the formation of PbI 2 originated from the reaction between iodine ions (I − ) of the perovskite and oxygen vacancies of TiO 2 .…”
Section: Rigid Pscs Based On Tio 2 and Tio 2 /C 60 Etlsmentioning
confidence: 99%
“…[18] Rather than PC 61 BM, moreover, a pristine C 60 fullerene modification layer possesses better resistance to the PbI 2 solution. [21] However, the low-temperature solution-processed pristine fullerene interlayer has rarely been reported for highefficiency PSCs, especially those with flexibility. [21] However, the low-temperature solution-processed pristine fullerene interlayer has rarely been reported for highefficiency PSCs, especially those with flexibility.…”
mentioning
confidence: 99%
“…25,30,31,[34][35][36][37][38][39][40][41][42][43] Ion migration on timescales from 10 -1 to 10 2 s has been widely investigated to explain the hysteresis of current density-voltage (J-V) curves. 36,37,40,[44][45][46][47][48] However, the impact of X and potentially A and/or B defect formation and migration on PSC performance on timescales above 10 3 s, which are indicative of long-term stability, remains unknown. 49 Little experimental evidence exists on this subject since separating reversible ion migration from any non-reversible long-term degradation is complex in real device working conditions, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…21 To mitigate the effects on grain boundaries and trap states, the concept of perovskite/fullerene (P/F) heterojunctions has attracted considerable attention. 2225 Huang et al 26 demonstrated that the trap states on the surface and grain boundaries are the origin of photocurrent hysteresis and that fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the undesirable photocurrent hysteresis. 26 …”
Section: Introductionmentioning
confidence: 99%