Abstract:In the semiconductor fabrication industry, high-power
plasma is
indispensable to obtain a high aspect ratio of chips. For applications
to ceramic components including the dielectric window and ring in
the semiconductor etching chamber, the Y2O3 ceramics
have attracted interest recently based on excellent erosion resistance.
When a high bias voltage is applied in a plasma environment containing
fluorine gas, both chemical etching and ion bombardment act simultaneously
on the ceramic components. During this etch… Show more
“…It is well-known that changes of surface roughness are significantly dependent on grain size 26 . Therefore, the positive effect in this study can be attributed to the inhibition of grain growth through a pinning effect and densification achieved by reducing the sintering temperature 25 , 45 . Figure 5 ( a ) Measured surface roughness (R a ) of Y 2 O 3 and Y 2 O 3 -YAM composite ceramics at masked and plasma exposed regions with different volume ratios and mixed gas ratios of CF 4 :Ar:O 2 .…”
Section: Resultsmentioning
confidence: 71%
“…This reaction results in the formation of AlF 3 layers, prone to removal via physical attack due to the vulnerability of fluorinated layers to ion sputtering. Consequently, an etching depth differential between the Y 2 O 3 and YAM compositions arose 15 , 25 , 32 . Craters within the Y 2 O 3 -YAM composite microstructure formed, but were very small in size, unlike the results of the Y 2 O 3 mono-composition.…”
Section: Resultsmentioning
confidence: 99%
“…This results in its conversion into contaminant particles. Also, cracks form at the interface of the matrix and the fluorinated material 25 . In addition, for sintered Y 2 O 3 ceramics that become densified at high sintering temperature, large grain sizes can cause large craters after etching, resulting in rougher surface roughness and large contaminant particles 26 .…”
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber’s interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3–Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications.
“…It is well-known that changes of surface roughness are significantly dependent on grain size 26 . Therefore, the positive effect in this study can be attributed to the inhibition of grain growth through a pinning effect and densification achieved by reducing the sintering temperature 25 , 45 . Figure 5 ( a ) Measured surface roughness (R a ) of Y 2 O 3 and Y 2 O 3 -YAM composite ceramics at masked and plasma exposed regions with different volume ratios and mixed gas ratios of CF 4 :Ar:O 2 .…”
Section: Resultsmentioning
confidence: 71%
“…This reaction results in the formation of AlF 3 layers, prone to removal via physical attack due to the vulnerability of fluorinated layers to ion sputtering. Consequently, an etching depth differential between the Y 2 O 3 and YAM compositions arose 15 , 25 , 32 . Craters within the Y 2 O 3 -YAM composite microstructure formed, but were very small in size, unlike the results of the Y 2 O 3 mono-composition.…”
Section: Resultsmentioning
confidence: 99%
“…This results in its conversion into contaminant particles. Also, cracks form at the interface of the matrix and the fluorinated material 25 . In addition, for sintered Y 2 O 3 ceramics that become densified at high sintering temperature, large grain sizes can cause large craters after etching, resulting in rougher surface roughness and large contaminant particles 26 .…”
In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber’s interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3–Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications.
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