Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon

Weronek, K.; Weber, Jens; Höpner, A.; Ernst, F.; Buchner, R.; Stefaniak, M.; Alexander, H.

doi:10.4028/www.scientific.net/msf.83-87.1315

Cited by 18 publications

(3 citation statements)

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“…This phenomenon was observed for Ge [6,7] and Si [4]. The D3 line is a phonon replica of D4 [8][9][10], but the ratio between their intensities is variable, because the probability of electron-phonon interaction depends on the length of a straight dislocation segment [9,10].…”

Section: Introductionmentioning

confidence: 98%

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Steinman

Vdovin

Yugova

et al. 1999

Semicond. Sci. Technol.

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The dislocation structure and photoluminescence of partially relaxed Si 1−x Ge x layers on Si(001) substrates were studied to reveal the contribution from dislocations localized in different regions of the heterostructure (SiGe layer, SiGe/Si interface, Si substrate) to the dislocation-related PL. The D1 and D2 lines were ascribed to products of dislocation reactions in intersection sites. The known dependence of the D4 line spectral position on the Ge content is not observed, which is explained by the effect of elastic strain in the SiGe/Si heterostructure.

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Section: Introductionmentioning

confidence: 98%

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Steinman

Vdovin

Yugova

et al. 1999

Semicond. Sci. Technol.

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“…They concluded that impurities do not have a marked effect on the recombination processes and D1 and D2 are probably related to kinks on the dislocation. Similarly, Weronek et al [7] stated that the D-band recombination is independent of impurities trapped at the dislocations and they attributed D1 and D2 to the stacking fault between two Shockley partial dislocations. They also demonstrated that the D-band intensity was reduced following deliberate metal contamination in the case of Fe and Cu.…”

Section: Review Of Low Temperature Pl Studies On Defectsmentioning

confidence: 95%

“…The deliberate metal contamination experiments of Weronek et al [7] can easily be explained on the basis of enhanced non-radiative recombination, because they introduced sufficient contamination (Cu or Fe) to produce metal precipitates and then observed a significant reduction in the D-band intensity.…”

Section: Influence Of Transition Metal Contaminationmentioning

confidence: 99%

Photoluminescence characterization of defects in Si and SiGe structures

Higgs

Chin

Wang

et al. 2000

J. Phys.: Condens. Matter

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Low-temperature photoluminescence (PL) spectroscopy is a very sensitive tool to investigate the presence of dislocations in Si. The main dislocation-related bands (D1-D4) have been attributed to a wide range of causes, either intrinsic properties of the dislocation or impurity related. PL is a competitive recombination process and the non-radiative processes need to be measured to understand the overall effect of impurities. PL spectroscopy samples a large volume in comparison to the dislocation itself and therefore gives an average effect. High-resolution room-temperature PL mapping (SiPHER) has been used to detect defects in both Si and SiGe wafers. Whole-wafer PL maps reveal the presence of slip on 300 mm Si wafers. Comparison studies with defect etching show that there is a one-to-one correlation between defects detected in the PL micro-scans and those revealed by defect etching. Whole-wafer mapping has revealed a number of different defect types in SiGe epilayers. The ability to record whole-wafer PL maps facilitates the rapid identification of inhomogeneities and defects. High-resolution PL micro-maps showed the defect area to contain a high density of misfit dislocations, and the nucleation site has strong non-radiative recombination. One common defect type was analysed using plan view transmission electron microscopy (TEM) and optical microscopy; these results revealed the presence of a high density of defect loops and stacking faults consistent with the high recombination rate at the defect site.

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About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation

Pizzini¹,

Acciarri²,

Leoni³

et al. 2000

phys. stat. sol. (b)

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Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon

Cited by 18 publications

References 0 publications

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Photoluminescence characterization of defects in Si and SiGe structures

About the D1 and D2 Dislocation Luminescence and Its Correlation with Oxygen Segregation

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