1997
DOI: 10.1016/s0022-3093(96)00542-x
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Correlation of silica glass properties with the infrared spectra

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Cited by 162 publications
(132 citation statements)
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“…The stress is also responsible for bond angle variations in the SiO 2 matrix that explain a faster etching rate in the LAZ. The correlation between stress and etching rate was shown in [24]. This supports the similar trend we are observing between the cantilever bending and the etching rate.…”
Section: Discussion and Interpretationsupporting
confidence: 87%
“…The stress is also responsible for bond angle variations in the SiO 2 matrix that explain a faster etching rate in the LAZ. The correlation between stress and etching rate was shown in [24]. This supports the similar trend we are observing between the cantilever bending and the etching rate.…”
Section: Discussion and Interpretationsupporting
confidence: 87%
“…Indeed, the stress not only influences optical properties (by introducing undesired birefringence effects) but also etching rates [10] as well as the formation of undesired cracks during the writing of arbitrary patterns. Therefore, an accurate knowledge of the stress-state induced in the material after laser exposure is essential for the reliability and repeatability of the direct-write process.…”
Section: Resultsmentioning
confidence: 99%
“…Stress not only influences optical properties but also etching rate [10] and the occurrence of cracks during laser exposure. In that context, the results presented here are of particular significance for assessing the stress distribution induced by femtosecond laser processing in the non ablative regime.…”
Section: Introductionmentioning
confidence: 99%
“…As the number of pulses impacting the material increases, the material is progressively further densified and, as a consequence, the stress around the laser affected zones builds up. On the other hand, tensile stress also changes the bond angles between the tetrahedral constituents of the SiO 2 matrix [22] [25], which in turn has been correlated to an increase of the HF etching rate of SiO 2 [23]. The higher the tensile stress, the higher the etching rate.…”
Section: Interpretation and Hypothesesmentioning
confidence: 99%