Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes

Walters, Robert J.; Messenger, S.R.; Summers, G.P.; Burke, E.A.; Khanna, Shyam M.; Estan, D.; Erhardt, Lorne; Liu, Hui Chun; Gao, M.; Buchanan, M.; SpringThorpe, A. J.; Houdayer, A.; Carlone, C.

doi:10.1109/23.983129

Cited by 28 publications

(20 citation statements)

References 13 publications

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“…Furthermore, the shape of the degradation curves is the same regardless of proton energy. This was also observed for GaAs QW devices [6] and leads us to believe that no additional degradation mechanism is operative at very high radiation fluences.…”

Section: A Raw Datamentioning

confidence: 75%

“…6 is noticed to lie above the curve. This apparent deviation of the RDCs at higher energies has previously been observed for some physical observables in GaAs-based devices and can be explained by NIEL calculations [6]. The relative increase in the energy dependence of the damage constants at high energies seems to be attributed to the effect of nuclear interactions on the damage mechanism for a given parameter.…”

Section: B Niel Calculationsmentioning

confidence: 78%

“…We, therefore, can use the variability in to produce damage constants relative to a given reference energy (usually 10 MeV). This analysis procedure is similar to that used in [6] for the proton radiation damage energy dependence of GaAs QW LED light output data. Table I gives the fitted values of parameter for different proton energies using a constant value of for all energies used in our GaN QW LED measurements.…”

Section: A Raw Datamentioning

confidence: 98%

“…Details about the device characterization have been published previously [6], [7]. We provide here pertinent details for completeness of the present paper.…”

Section: Device Characterizationmentioning

confidence: 99%

“…All irradiations at the University of Montreal and at TRIUMF were done at room temperature. The method used to irradiate the diodes at the University of Montreal and at TRIUMF have been described previously [6], [7]. We include key details of the irradiation procedure here for completeness.…”

Section: B Irradiation Proceduresmentioning

confidence: 99%

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Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna¹,

Estan²,

Erhardt³

et al. 2004

IEEE Trans. Nucl. Sci.

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Gallium nitride (GaN)-based blue-emitting diodes (CREE Model C430-DH85) were irradiated at room temperature with protons in the energy range 2 to 115 MeV at fluences varying from 1 10 11 to 1 10 15 cm 2 . Light output degradation curves were obtained for each energy and the damage constant ( ) associated with these curves was determined according to the theory of Rose and Barnes. For proton energies less than 10 MeV, varies inversely with the proton energy ( ). At higher energies, is consistently above the 1 relationship. The change in nature of the energy dependence is attributed to nuclear interactions. Nonionizing energy loss calculations for the case of protons on GaN are presented. Good agreement between theory and experiment is obtained.Index Terms-Blue LEDs, energy dependence, gallium nitride, light emission degradation, non-ionizing energy loss (NIEL), optoelectronics, proton, quantum-well light-emitting diodes, radiation damage.

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Section: A Raw Datamentioning

confidence: 75%

Section: B Niel Calculationsmentioning

confidence: 78%

Section: A Raw Datamentioning

confidence: 98%

“…Details about the device characterization have been published previously [6], [7]. We provide here pertinent details for completeness of the present paper.…”

Section: Device Characterizationmentioning

confidence: 99%

Section: B Irradiation Proceduresmentioning

confidence: 99%

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