2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) 2019
DOI: 10.1109/pvsc40753.2019.8980692
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Correlation of Electronic and Microscopic Properties of TiOx/Al-based Electron-selective Contacts in Silicon Solar Cells

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“…The aim of this study is to elucidate how composition changes on a nanoscale affect the electronic properties of atomic layer deposition (ALD) grown, n-Si/SiO x /TiO y /Al carrier selective contacts with native SiO x layers. As was previously shown 20,[26][27][28] , solar cells with such contacts exhibit quite poor interface passivation and high series resistance in the as-deposited state. After a low temperature annealing step though, both properties improve considerably, leading to efficiencies of up to 20.3% for the batch of solar cells investigated here 26 and 22.1% for the current record solar cells with SiO x /TiO y based contacts 1 .…”
mentioning
confidence: 64%
“…The aim of this study is to elucidate how composition changes on a nanoscale affect the electronic properties of atomic layer deposition (ALD) grown, n-Si/SiO x /TiO y /Al carrier selective contacts with native SiO x layers. As was previously shown 20,[26][27][28] , solar cells with such contacts exhibit quite poor interface passivation and high series resistance in the as-deposited state. After a low temperature annealing step though, both properties improve considerably, leading to efficiencies of up to 20.3% for the batch of solar cells investigated here 26 and 22.1% for the current record solar cells with SiO x /TiO y based contacts 1 .…”
mentioning
confidence: 64%