Correlation of electrical characteristics with interface chemistry and structure in Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitors after post metallization annealing

Abstract

We report the effect of post-metallization annealing (PMA) on the electrical behavior of Pt/Ru/PbZr0.52Ti0.48O3(PZT)/Pt capacitors and correlations with the physical chemistry of the top electrode/PZT interface. PMA improves the electrical characteristics, in particular the breakdown field while inducing important chemical and structural modifications at the interface. The Ru electrode layer is oxidized and disrupted. There is evidence for the formation of RuOx and ZrRuOx metallic phases at the interface but no Pb transport into the electrode region is observed.

Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy

“…Therefore, it seems necessary to shed more light on the changes in the chemical structures occurring in the films and buried interfaces of TFT devices with nondestructive analyses. Hard X-ray photoelectron spectroscopy (HAXPES) − is a suitable method to study the chemical states of buried layers and interfaces in real device structures with a nondestructive way owing to the large probing depth of photoelectrons with several 10 nm. Thus, with HAXPES analyses for In 2 O 3 -based TFTs, we will be able (1) to observe how oxygen species move and react inside stacked devices, (2) to see whether C doping has the expected effect on In 2 O 3 such as a reduction in the V O 2 + level as well as suppression of vacancy migration, and (3) to confirm whether there are further issues that must be addressed to improve the general performance of devices.…”

Analysis of Iodide Transport on Methyl Ammonium Lead Iodide Perovskite Solar Cell Structure Through Operando Hard X-ray Photoelectron Spectroscopy

“…However, in a nondestructive analysis, soft PES often fails to provide bulk and buried interface features due to its large surface sensitivity. Hard X-ray photoelectron spectroscopy (HAXPES) − offers an immense opportunity to investigate up to several tens of nanometers depth without any damage on the samples. Taking this into account, here we present one methodology to directly track down, over a several nanometer scale, the dynamics of ion species inside MAPbI 3– x Cl x (HaP)-based SC devices under an operating condition.…”