Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

Hao, Ming-Yin; Chen, W. M.; Lai, Kafai; Lee, Jack C.; Gardner, Mark; Fulford, J.

doi:10.1063/1.113834

Cited by 35 publications

(11 citation statements)

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“…Further, nitrided oxides have been reported to demonstrate some improvements in electrical properties, such as reduced interface-state generation, 1 increased resistance to hot carrier injection, 2 higher dielectric breakdown reliability, 3,4 and strong immunity against ionizing radiation. 5 On the other hand, the introduction of nitrogen causes a serious problem of negative-bias temperature instability ͑NBTI͒ in p-type MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Nitridation effects on Pb center structures at SiO2/Si(100) interfaces

Miura

Fujieda

2004

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Nitridation effects on Pb center structures at SiO2/Si(100) interfaces

Miura

Fujieda

2004

Journal of Applied Physics

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“…The Si oxide films with N incorporation [1][2][3][4][5][6][7][8][9][10][11][12][13] are believed to be candidates for replacing the conventional Si oxides because they show better performances than the conventional oxides. It is indeed reported that the N-incorporated Si oxide films reduce leakage current [8], increase charge-to-breakdown value [9], and suppress boron diffusion [10]. Although it is argued that the electrical improvement is related to lower concentration of charge traps in the Si oxynitride films, the underlying physical origins remain unknown.…”

mentioning

confidence: 99%

Atomic and Electronic Structures of N-Incorporated Si Oxides

Jeong

Oshiyama

2001

Phys. Rev. Lett.

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We present first-principles total-energy calculations on the N-incorporated Si oxides, regarded as a replacement for conventional SiO2 in device technology. We investigate the energetics, charge states, and electronic structures for various bond configurations around N. While they remain in the N-incorporated structures, the charge trap states, responsible for leakage current in SiO2, are effectively removed from the energy gap in the H-terminated structures. This shows that improvement in the electrical reliabilities of Si oxynitride films is originated not from N incorporation itself, but from the coexistence of N and H.

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“…The defect concentration resulting from the RTAT model decreases as the oxide thickness is reduced, as already observed. [51,52] In summary, a new model for the SILC conduction mechanism has been proposed. Calculations are in good agreement with a large amount of experimental data, thus supporting the validity of the proposed RTAT model and the assumption of electron-hole recombination at deep levels in the oxide.…”

Section: Silc Modelingmentioning

confidence: 99%

Evidence for recombination at oxide defects and new SILC model

Ielmini

Spinellii²,

Lacaita³

et al.

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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This work presents experimental and computational investigations on the physical mechanisms of SILC. Carrier separation measurements are carried out on MOS samples with oxide thickness 6 -8 nm, highlighting the electron and hole contributions to the SILC. We have investigated the relation between these components by means of timerelaxation. It is found that a linear relationship holds between electron SILC and hole SILC, measured at different times after the initial high-field stress. The same linearity has been observed for increasing fluences of injected electrons, at fixed stressing field. A correlation between electron and hole SILC is found also from a comparison between carrier separation data obtained in n f -and p+-polysilicon devices. These experimental data entails that hole SILC is due to a recombination current.As a result of these experimental findings, a new model for the SILC is developed. This model is based on trapassisted tunneling, but also accounts for hole tunneling and includes Shockley-Hall-Read recombination process in the bulk oxide as a new leakage mechanism. Simulations in the oxide thickness range 5.9 -8.2 nm show excellent agreement with I -V measurements and carrierseparation data. The resulting defect concentration scales with the oxide thickness, in agreement with published results. The energy distribution of defects responsible for the steady-state leakage is located 0.7 -1.3 eV below the Si conduction-band minimum. Capture cross sections of cm2 have been assumed for electrons and holes respectively, compatible with a donor charge state of the SILC-related defect centers.Simulations are finally shown for oxide thickness to, = 2.8 nm. The mechanism of recombination in the bulk oxide accounts very well for the observation of low-voltage SILC in ultrathin oxide, showing the effectiveness of the proposed SILC model. and

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Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides

Cited by 35 publications

References 0 publications

Nitridation effects on Pb center structures at SiO2/Si(100) interfaces

Nitridation effects on Pb center structures at SiO2/Si(100) interfaces

Atomic and Electronic Structures of N-Incorporated Si Oxides

Evidence for recombination at oxide defects and new SILC model

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