Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

Rosner, S. J.; Carr, Elizabeth C.; Ludowise, M. J.; Girolami, G.; Erikson, H. I.

doi:10.1063/1.118322

Cited by 547 publications

(331 citation statements)

References 15 publications

Supporting

Mentioning

310

Contrasting

Order By: Relevance

“…The small pits observed are 30 nm in size as was the case in Ref. 10. Although the two images are different ͑in one case the defects appear to lie along the grain boundaries and in the other terminating steps͒ the ''defect free'' regions are typically on the order of 0.5 m which also appears to be the case in Ref.…”

Section: ͓S0003-6951͑98͒04649-x͔supporting

confidence: 50%

“…However, the correlation between cathodoluminescence ͑CL͒ and surface morphology ͑dislocations terminating as pits in the surface͒ shown by Rosner et al indicates that linear dislocations are important in recombination processes. 10 In this experiment, we have determined both electron and hole diffusion lengths from electron beam induced current ͑EBIC͒ measurements on material that was characterized by atomic force microscopy ͑AFM͒. We then compare the distribution of defect induced depressions on the surface with the measured diffusion lengths.…”

Section: ͓S0003-6951͑98͒04649-x͔mentioning

confidence: 99%

See 1 more Smart Citation

Correlation between the surface defect distribution and minority carrier transport properties in GaN

Bridger

Bandić

Piquette

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

We have studied linear dislocations and surface defects in p-and n-type metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy grown GaN films on sapphire with atomic force microscopy. The surface pits due to threading dislocations were found not to be distributed randomly but on the boundaries of growth columns. The dislocations are thought to be electrically active since the average distance between them ͑average column size͒ is comparable to minority carrier diffusion lengths as measured by electron beam induced current experiments on Schottky diodes fabricated with the same material. Diffusion lengths found for holes and electrons are on the order of L p ϭ0.28 m and L e ϭ0.16 m which corresponded to the sizes of regions free from surface dislocations in both cases and can be described by a simple model of recombination on grain boundaries. © 1998 American Institute of Physics. ͓S0003-6951͑98͒04649-X͔Gallium nitride based devices are currently of great interest for optoelectronic 1-3 as well as high power and high temperature electronics. 4,5 Since many of the performance characteristics of bipolar devices are determined by the minority carrier transport properties ͑diffusion lengths and lifetimes͒, 6 it is useful to determine how they are affected by the defect structure. It has been assumed that linear dislocations were electrically inert 7-9 since they had little effect on the performance or reliability of GaN light emitting diodes. However, the correlation between cathodoluminescence ͑CL͒ and surface morphology ͑dislocations terminating as pits in the surface͒ shown by Rosner et al. indicates that linear dislocations are important in recombination processes. 10 In this experiment, we have determined both electron and hole diffusion lengths from electron beam induced current ͑EBIC͒ measurements on material that was characterized by atomic force microscopy ͑AFM͒. We then compare the distribution of defect induced depressions on the surface with the measured diffusion lengths. Because the density of linear dislocations threading the GaN is believed to be approximately the same as those reaching the top surface of the film for thin films, 7 the two-dimensional ͑2D͒ AFM data should represent the 3D distribution of those dislocations. For thicker films, however, the density of threading dislocations reaching the surface of the film decreases with film thickness. Moreover, the AFM does not reveal all types of defects. Nevertheless, it is the nonuniform distribution of the defects and not their number that is considered here.The AFM data were obtained using a Digital Instruments Nanoscope IIIa operating in tapping mode. A cross check of the data was performed using contact AFM with oxide sharpened tips and no significant differences were found. The EBIC experiments were conducted in a JEOL6400 V electron microscope with a GW Electronics preamplifier followed by GW Electronics specimen current amplifier or Keithley 486 picoammeter. The entire apparatus was enclosed in an el...

show abstract

Section: ͓S0003-6951͑98͒04649-x͔supporting

confidence: 50%

Section: ͓S0003-6951͑98͒04649-x͔mentioning

confidence: 99%

Correlation between the surface defect distribution and minority carrier transport properties in GaN

Bridger

Bandić

Piquette

et al. 1998

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Generally, darker areas in the CL images are identified as regions where minority carriers are depleted due to high non-radiative recombination velocity at crystal defects [27]. Since the CL is not corrected for any UV response of the system, defining the relative contribution of any of the NBE-or defect-related-emission to the yielded CL intensity or comparing peak intensities at different wavelengths in a same spectrum is not relevant.…”

Section: Resultsmentioning

confidence: 99%

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Kakanakova‐Georgieva

Nilsson

Janzén

2012

Journal of Crystal Growth

View full text Add to dashboard Cite

We report on a growth of AlN at reduced temperatures of 1100 o C and 1200 o C in a horizontaltube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500-1600 o C and using a joint delivery of precursors. We present a simple route -as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply -for the AlN growth process on SiC substrates at the reduced temperature of 1200 o C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ~ 700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.

show abstract

“…since phologenerated carries will redistribute to screen electric fields near the surface. This technique is often called surface photovoltage microscopy [65]. Using super-band-gap photons, Bozek et a!.…”

Section: Investigation Of Defects By Spmmentioning

confidence: 99%

“…Dislocations could induce carrier scattering [64J. non·radiative recombination (65]. or lead 10 high reverse-bias leakage (39.66).…”

Section: Investigation Of Defects By Spmmentioning

confidence: 99%

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

Rodriguez

Gruverman

Nemanich

Scanning Probe Microscopy

View full text Add to dashboard Cite

Recent interest in the technological potential of nitride-based semiconductors has led to the development and commercialization of a wide range of electronic devices. The nanoscale investigation of the electric properties of III-nitride thin films, bulk crystals, and heterostructures is of considerable interest for determining how interfaces, defects, and inversion domain boundaries affect device performance. The pyroelectric nature of wurtzitic III-nitrides is characterized by a spontaneous polarization that exists without the presence of an external field and by a polarization-bound surface charge. Scanning probe-based measurements of surface contact potentials and surface band bending in these materials, which are of crucial importance to device design, are summarized in this review chapter. In addition, the role of charged defects on device performance is explored by scanning probe techniques. Lastly, the measurement of polarity and of the screening mechanism of III-nitrides, which are fundamental issues for the fabrication of devices based on polarity effects, are discussed. This chapter provides a critical analysis of the contributions made by scanning probe-based techniques toward a deeper understanding of the III-nitride material system.

show abstract

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

Cited by 547 publications

References 15 publications

Correlation between the surface defect distribution and minority carrier transport properties in GaN

Correlation between the surface defect distribution and minority carrier transport properties in GaN

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

Contact Info

Product

Resources

About