Correlation of a generation-recombination center with a deep level trap in GaN

Nguyen, Xuan Sang; Lin, Kaifan; Zhang, Z.; McSkimming, Brian M.; Arehart, Aaron R.; Speck, James S.; Ringel, S. A.; Fitzgerald, Eugene A.; Chua, S. J.

doi:10.1063/1.4914393

Cited by 23 publications

(7 citation statements)

References 17 publications

(16 reference statements)

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“…Measurement was performed in a temperature range between 25 and 150˝C using a heated plate and an ATT Systems A150 temperature controller. (e.g., [14,17,20,21]) and between 0.71 and 0.82 eV (e.g., [1,9,19,[22][23][24]) were the most commonly reported. Unfortunately, their origin remains ambiguous.…”

Section: Methodsmentioning

confidence: 99%

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Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150˝C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77-0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of´6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface.

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Section: Methodsmentioning

confidence: 99%

“…The most popular one is deep-level transient spectroscopy (DLTS), which can be performed in capacitance-mode (C-DLTS) [7][8][9] or current-mode (I-DLTS) [10][11][12]. However, capacitance or current transient measurement on real HFET devices can be limited to a degree because of their small dimensions.…”

Section: Introductionmentioning

confidence: 99%

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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“…These results match roughly with previous literatures. [25][26][27][28] Deep level traps were induced in the near-interface of SiN X /AlGaN during electrical stress. The results are summarized in Table I.…”

Section: Resultsmentioning

confidence: 99%

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

et al. 2016

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In this paper, the trap behaviours in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated using transient capacitance measurement. By measuring the transient gate capacitance variance (ΔC) with different pulse height, the gate pulse induced trap behaviours in SiNX gate dielectric layer or at the SiNX/AlGaN interface is revealed. Based on the results, a model on electron traps in AlGaN/GaN HEMTs is proposed. The threshold voltage (Vth) instability in AlGaN/GaN HEMTs is believed to be correlated with the presence of these traps in SiNX gate dielectric layer or at the SiNX/AlGaN interface. Furthermore, trap density before and after step-stress applied on drain electrode is quantitatively analyzed based on ΔC measurement.

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“…The temperature-dependent relationship was also re-plotted in figure 4(c). It was found that the emission time constant maintained an exponential relationship with temperature, which can be fitted by the Arrhenius relation, assuming a degeneracy ratio of 1, as shown in equation ( 2) [38]:…”

Section: Dlts Results and Discussionmentioning

confidence: 99%

Single-trap emission kinetics of vertical β-Ga₂O₃ Schottky diodes by deep-level transient spectroscopy

Chen

Luo

et al. 2021

Semicond. Sci. Technol.

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We report the emission kinetics of a single-electron trap (E1, E C–0.63 eV) in Sn-doped ( 2 ˉ 01) β-Ga2O3 crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ( τ ) of the electrons emitted from the trap level E1 was thoroughly investigated as a function of the temperature and the electric field (E-field) . The temperature-dependence τ of E1 was extracted by both the temperature-scanning and isothermal modes of DLTS. It was found that the emission process accelerated exponentially from 200 K to 350 K. The E-field dependence of the emission time constant could be divided into two regimes for all measurement steps (250–325 K). In the low-electric-field regime, the emission time constant of the trap decreased slightly with a strengthened E-field. With a further enhancement of the E-field (E > 1.76 MV cm−1), the field-enhanced emission rate was accurately modeled by the Poole–Frenkel effect; the accelerated emission process was attributed to a reduction of the Coulomb well barrier for the donor-like trap E1.

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Correlation of a generation-recombination center with a deep level trap in GaN

Abstract: Articles you may be interested inDeep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy J. Appl. Phys. 119, 095707 (2016)

Cited by 23 publications

References 17 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Single-trap emission kinetics of vertical β-Ga₂O₃ Schottky diodes by deep-level transient spectroscopy

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Correlation of a generation-recombination center with a deep level trap in GaN

Abstract: Articles you may be interested inDeep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy J. Appl. Phys. 119, 095707 (2016)

Cited by 23 publications

References 17 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy

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Product

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Single-trap emission kinetics of vertical β-Ga₂O₃ Schottky diodes by deep-level transient spectroscopy