Correlation between the multifractal structure, crystalline and photoluminescence properties of engineered CZO thin films

Solaymani, Shahram; Ghaderi, Atefeh; Dejam, Laya; Garczyk, Żaneta; Sapota, Wiktoria; Stach, Sebastian; Dalouji, Vali; Luna, Carlos; Elahi, S. Hossein

doi:10.1016/j.ijhydene.2017.04.045

Cited by 34 publications

(10 citation statements)

References 40 publications

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“…Semiconductor materials with different structures and morphology are used in various research and development fields of clean and renewable energy due to their unique characteristics [1][2][3]. The structure, morphology and properties of semiconductor materials are bound not only to precursor materials and preparation methods, but also to dopants and annealing temperatures [4][5][6]. Among the semiconductor materials, ZnO with a wide band gap (3.37 eV) is an II-VI semiconductor and it has a large exciton binding energy of 60 meV [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Eu doping on the structure, morphology and luminescence properties of ZnO submicron rod for white LED applications

Xin

2018

J Theor Appl Phys

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Eu 3+-doped ZnO submicron rod has been prepared by a hydrothermal method. Synthesized rods are characterized by X-ray diffraction, scanning electron microscopy and photoluminescence spectra (PL). The results indicated structures and morphology of rods affected by the Eu 3+ doping concentration. 5 D 0-7 F J (J = 1, 2 and 3) of Eu 3+ emission appeared, and energy transfer from the ZnO host and deep defects of ZnO to Eu 3+ in the ZnO:Eu is occurred. Strong and white emission was observed in the sample with 15% Eu.

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Section: Introductionmentioning

confidence: 99%

Effect of Eu doping on the structure, morphology and luminescence properties of ZnO submicron rod for white LED applications

Xin

2018

J Theor Appl Phys

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“…5. To calculate the absorption coefficient, we have used the following relation[18]:InEqs. (1, 3), T and d are the transmittance and film thickness, respectively.…”

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confidence: 99%

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

Shokri

Dejam

2018

Int Nano Lett

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In this work, aluminum-doped zinc oxide (AZO) thin films were deposited by DC sputtering on a glass substrate at a typical sputtering power. It was observed that the AZO structure changes on the ZnO crystalline structure. The measurement of the transparency spectrum on the AZO films shows an optical bandgap about 4.3 eV, which the Al doping into ZnO structure pronounced width localized states by Urbach energy that was 0.42 eV. Moreover, the experimental results on the electrical properties of AZO/Au thin film were evaluated at different temperatures by four-point probe. Also, a simulation analysis on the electrical parameters of the Schottky Au/AZO junction has been done. Our calculation is based on the thermionic emission theory, in which by fitting the numerical results with the experimental current-voltage measurements, the barrier height, ideality factor and saturation current have been obtained. Our result confirmed excellent rectifying characteristics. The extracted result may be useful in designing nanoelectronic devices.

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“…Also, at low pressures, the bias voltage and the energy of ions are higher according to Eqs. (1) and (2). The sputtering process would be beginning with applied RF power, then the chamber's pressure increases to reach a maximum value of the mean free path length of the hydrocarbon ions and finally sputtering is stopped.…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, researchers showed more attention to nanomaterials because of wide variety of investigations and applications which can be considered for them [1][2][3][4]. Besides, nanoparticles or nanocrystals as a part of nanocomposite have been appeared in many studies to identify new aspects of their properties as new combination [5,6].…”

Section: Introductionmentioning

confidence: 99%

The effect of initial pressure on growth of FeNPs in amorphous carbon films

et al. 2018

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Iron nanoparticles in amorphous hydrogenated carbon films (FeNPs@a-C:H) were prepared with RF-sputtering and RFPECVD methods by acetylene gas and Fe target. In this paper, deposition and sputtering process were carried out under influence of different initial pressure gas. The morphology and roughness of surface of samples were studied by AFM technique and also TEM images show the exact size of FeNPs and encapsulated FeNPs@a-C:H. The localized surface plasmon resonance peak (LSPR) of FeNPs was studied using UV-vis absorption spectrum. The results show that the intensity and position of LSPR peak are increased by increasing initial pressure. Also, direct energy gap of samples obtained by Tauc law is decreased with respect to increasing initial pressure.

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Correlation between the multifractal structure, crystalline and photoluminescence properties of engineered CZO thin films

Cited by 34 publications

References 40 publications

Effect of Eu doping on the structure, morphology and luminescence properties of ZnO submicron rod for white LED applications

Effect of Eu doping on the structure, morphology and luminescence properties of ZnO submicron rod for white LED applications

Experimental and theoretical investigations on temperature and voltage dependence of an Au/AZO thin-film Schottky diode

The effect of initial pressure on growth of FeNPs in amorphous carbon films

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