Correlation between the electrooptical properties and the composition of α-Si1−xGex:H (x&lt;0.1) thin films

Nedialkova, L.; Dimova‐Malinovska, D.; Kudojarova, V.Kh.

doi:10.1016/0927-0248(92)90041-m

Cited by 5 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The coefficient B was assumed as a parameter for the band tail states [8][9][10]. According to [5,10], a decrease in B implies an increase in the disorder of the structure and a consequent increase in the conduction band tail width in the case of a-Si 1-x C x :H and a-Si 1-x Ge x :H films [10,23,24]. In our case, a decrease in B is observed with doping and with T s decreasing, which is accompanied by a deterioration of the crystalline structure of the ZnO films.…”

mentioning

confidence: 99%

Correlation between the stress in ZnO thin films and the Urbach band tail width

Dimova‐Malinovska

Nichev

Angelov

2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

A comparison of the changes in the optical and structural properties of ZnO thin films, undoped and doped with Al, Er and Ta, deposited by magnetron co‐sputtering in Ar is performed in this work. A set of ZnO samples deposited by sputtering in Ar+H2 is studied, as well. The films are deposited at different substrate temperatures and with different concentrations of the doping elements. The band gap energy and the Urbach band tail parameter are calculated from the spectral dependence of the coefficient of absorption. The stresses in the films are calculated from X‐ray diffraction patterns. A correlation between the band tail widths and the stress in the ZnO thin films is observed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract