Correlation between the electronic and atomic structure, transport properties, and oxygen vacancies on La0.7Ca0.3MnO3 thin films

Rubio-Zuazo, J.; Onandia, Laura; Ferrer, Pilar; Castro, G.R.

doi:10.1063/1.4861385

Cited by 10 publications

(4 citation statements)

References 18 publications

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“…It is known that the oxygen nonstoichiometry of complex oxides affects their resistivity. For instance, a shift of the metal‐to‐insulator transition as a function of the oxygen deficiency (

δ

) in perovskite‐type La

_{0.7}

_{0.3}

MnO

_{3 - δ}

thin films exists in the range of 0

< δ <

0.21 . The film‐substrate interface can influence the resistive properties of epitaxial La

_{0.7}

_{0.3}

MnO

_{3}

thin films as well .…”

Section: Introductionmentioning

confidence: 99%

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Boylo

2017

Physica Status Solidi (b)

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The present paper examines the influence of a nonlinear relationship between the local oxygen‐vacancy concentration and the local resistivity on resistive switching effects in complex oxides. The continuity equation has been used as a model for the motion of oxygen vacancies when a periodic time‐dependent electrical current is applied. The question of endurance of the switching cycles is discussed. It is found that nonlinearity of the resistivity–concentration dependence enhances the endurance.

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“…It is known that the oxygen nonstoichiometry of complex oxides affects their resistivity. For instance, a shift of the metal‐to‐insulator transition as a function of the oxygen deficiency (

δ

) in perovskite‐type La

_{0.7}

_{0.3}

MnO

_{3 - δ}

thin films exists in the range of 0

< δ <

0.21 . The film‐substrate interface can influence the resistive properties of epitaxial La

_{0.7}

_{0.3}

MnO

_{3}

thin films as well .…”

Section: Introductionmentioning

confidence: 99%

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Boylo

2017

Physica Status Solidi (b)

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“…7 Detailed structural and X-ray photoelectron spectroscopy on LSMO revealed clear correlations of structural, electronic and transport properties with oxygen vacancy concentration from 0 to about 7%. 8 Other recent experimental examples are the effect of oxygen vacancies on resistive switching in TiO 2Àx lms 9 and on the two-dimensional electron gas at the SrTiO 3 surface. 10 In addition, rst principle and density functional theory investigations have been performed on native point defects in LaAlO 3 , 11 on magnetic properties of Mg doped BiFeO 3 with and without oxygen vacancies, 12 and on energetics of intrinsic defects and their complexes in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance

et al. 2014

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The structure and functional properties of metal oxide films for device applications are largely affected by oxygen vacancies. While the macroscopic relationship between functionality and oxygen supply during growth is easy to access, the local influence of changing oxygen content on the incorporated metal atoms has been rarely investigated. As a model system, we use Mn as a local probe in hetero-and homoepitaxial ZnO thin films for electron paramagnetic resonance (EPR). Mn is expected to be incorporated as Mn 2+ in the Zn-lattice site of ZnO films grown in a wide range of oxygen partial pressures. The zero field splitting (ZFS) parameter D depends on the crystallographic c/a ratio of ZnO : Mn lattice constants as it measures the trigonal distortion of oxygen tetrahedra at the Zn 2+ site with respect to the Mn 2+ site. The ZFS parameter D correlates linearly with displacement of Mn 2+ ions along the c-axis in the MnO 4 tetrahedra and the corresponding bond lengths between the Mn 2+ ions and the axial oxygen ion.

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“…57 Nevertheless, the origin of the dead-layer formation in LSMO 58 thin films is still under debate [22]. Possible mechanisms 59 likely playing a role are substrate-induced strain and structural 60 distortions [23,24], chemical impurities and vacancies [25], as 61 well as intermixing at the IF [26].…”

Section: Introductionmentioning

confidence: 99%

Tuning electronic reconstructions at the cuprate-manganite interface

Schlueter

Aruta

Yang

et al. 2019

Phys. Rev. Materials

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The electronic properties of CaCuO 2 /La 0.7 Sr 0.3 MnO 3 (LSMO) superlattices are determined by the electronic structure of the structural units and in particular their interfaces. The electronic structure of LSMO is governed by a metal-insulator transition, which is controlled by the thickness of the units and the sample temperature, resulting in a systematic downward band shift for metallic samples (i.e., thick LSMO units, low temperature). We present a systematic study of the changes in the valence-band structure and screening features in Mn 2p and Cu 2p core-level spectra. The results show that hybridization of Cu 3d orbitals with out-of-plane O 2p orbitals can be systematically tuned by controlling the band alignment at the interface via the metal-to-insulator transition of the LSMO units. This opens a new route to rational design of functional interfaces and control of orbital reconstructions.

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Correlation between the electronic and atomic structure, transport properties, and oxygen vacancies on La_0.7Ca_0.3MnO₃ thin films

Cited by 10 publications

References 18 publications

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration

Local lattice distortions in oxygen deficient Mn-doped ZnO thin films, probed by electron paramagnetic resonance

Tuning electronic reconstructions at the cuprate-manganite interface

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