2001
DOI: 10.4028/www.scientific.net/ssp.80-81.343
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Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors

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“…Additionally, the reduced surface roughness of the amorphous metal TiAl 3 gate, combined with an amorphous Al 2 O 3 gate insulator, leads to an ideal, smooth template on which to deposit the semiconductor. This too is unlike polysilicon, in which laser annealed films can exhibit RMS roughness exceeding 5–20 nm, 16 which is expected to lead to large variation upon reduction of physical dimensions and limit reductions in gate‐insulator thickness. These considerations make AMeTFT a superior long‐term choice in terms of reliability and dimensional scaling of oxide thickness, channel length, and channel width.…”
Section: Discussionmentioning
confidence: 99%
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“…Additionally, the reduced surface roughness of the amorphous metal TiAl 3 gate, combined with an amorphous Al 2 O 3 gate insulator, leads to an ideal, smooth template on which to deposit the semiconductor. This too is unlike polysilicon, in which laser annealed films can exhibit RMS roughness exceeding 5–20 nm, 16 which is expected to lead to large variation upon reduction of physical dimensions and limit reductions in gate‐insulator thickness. These considerations make AMeTFT a superior long‐term choice in terms of reliability and dimensional scaling of oxide thickness, channel length, and channel width.…”
Section: Discussionmentioning
confidence: 99%
“…14,15 Integrating LTPS with IGZO exposes the IGZO to hydrogen liberated from hydrogenated silicon during passivation by laser annealing. 16 The hydrogen may not only reduce field-effect mobility, but it can also increase off-state leakage current in the metaloxide TFTs. 17 The combination of effects leads to compromised backplane performance.…”
Section: Introductionmentioning
confidence: 99%
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