Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors

Toutah, H.; Tala-Ighil, Boubekeur; Llibre, Jean-François; Mohammed‐Brahim, Tayeb; Helen, Youri; Gautier, Gaël; Mourgues, K.; Raoult, F.

doi:10.4028/www.scientific.net/ssp.80-81.343

Cited by 1 publication

(3 citation statements)

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“…Additionally, the reduced surface roughness of the amorphous metal TiAl 3 gate, combined with an amorphous Al 2 O 3 gate insulator, leads to an ideal, smooth template on which to deposit the semiconductor. This too is unlike polysilicon, in which laser annealed films can exhibit RMS roughness exceeding 5–20 nm, 16 which is expected to lead to large variation upon reduction of physical dimensions and limit reductions in gate‐insulator thickness. These considerations make AMeTFT a superior long‐term choice in terms of reliability and dimensional scaling of oxide thickness, channel length, and channel width.…”

Section: Discussionmentioning

confidence: 99%

“…14,15 Integrating LTPS with IGZO exposes the IGZO to hydrogen liberated from hydrogenated silicon during passivation by laser annealing. 16 The hydrogen may not only reduce field-effect mobility, but it can also increase off-state leakage current in the metaloxide TFTs. 17 The combination of effects leads to compromised backplane performance.…”

Section: Introductionmentioning

confidence: 99%

“…The high defect densities of LTPS TFTs often require post‐treatment using oxygen plasma, water vapor, or hydrogen plasma, as well as post‐metallization annealing; hydrogenation is a popular choice for passivating dangling bonds in both a‐Si:H and LTPS alike 14,15 . Integrating LTPS with IGZO exposes the IGZO to hydrogen liberated from hydrogenated silicon during passivation by laser annealing 16 . The hydrogen may not only reduce field‐effect mobility, but it can also increase off‐state leakage current in the metal‐oxide TFTs 17 .…”

Section: Introductionmentioning

confidence: 99%

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Innovations in thin‐film electronics for the new generation of displays

Zeumault,

Mendez,

Brewer

2024

J Soc Info Display

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Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the display industry's response to the limitations of silicon‐based thin‐film transistors (TFTs). Improvements sustaining Moore's Law drove the need to rethink MOSFET materials and structures. The display industry needs fundamental innovation at the device level. New thin‐film devices enable an inflection point in the use of displays, just as fin field‐effect transistor (FinFET) defined the inflection point in CMOS in the 2000s. This paper outlines two innovations in thin‐film device technology that offers improvement in image quality and power consumption of flat panel displays: amorphous metal gate TFTs (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Linked through a single core material set based on mass‐producible, thin‐film amorphous metals, these two innovations create near‐ and long‐term roadmaps simplifying the production of high‐image quality, low‐power consumption displays on glass (now) and plastic (future). In particular, the field‐effect mobility of indium gallium zinc oxide (IGZO) AMeTFTs (55–72 cm2/Vs) exceeds that of IGZO TFTs developed by existing display manufacturers without the need for atomic layer deposition or vertical stacking of heterostructure semiconductor films, making AMeTFTs a natural choice for the new G8.5–G8.7 fabs targeting IGZO backplanes.

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Section: Discussionmentioning

confidence: 99%