Correlation between structural and transport properties of La0.5Ca0.5MnO3 thin films grown by PLD

Rubi, D.; Duhalde, S.; Terzzoli, M.C; Villafuerte, M.

doi:10.1016/s0169-4332(02)00337-9

Cited by 13 publications

(4 citation statements)

References 9 publications

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“…All the samples are shown along the (00l) orientation with the LAO(00l) substrate. It is clear from the analysis that all the samples are having the single phase with no detectable impurity and crystallize in the orthorhombic structure with Pbnm space group and is in agreement with the reported ones [18] . There are no macro inclusions of secondary crystalline phases in their volume.…”

Section: Resultssupporting

confidence: 89%

Effects of Film Thickness on Laser Induced Voltage (LIV) of La2/3Ca1/3MnO3:Ag0.05 Thin Films Grown on LaAlO3 Substrates

Liu

Yan

Chen

et al. 2013

AMR

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La2/3Ca1/3MnO3:Ag0.05(LCMO:Ag0.05) thin films were prepared on vicinal cut LaAlO3(LAO) substrates with various film thicknesses by pulsed laser deposition technique (PLD). XRD results show that all the samples are shown along the (00l) orientation in orthorhombic structure with Pbnm space group. While the film thickness is around 450nm, the optimum LIV effects of the epilayer thin film have been obtained. The LIV effects enhancement of the LCMO:Ag0.05 thin films due to the photon scattering effects have been restrained and anisotropic seebeck coefficient improved.

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Section: Resultssupporting

confidence: 89%

Effects of Film Thickness on Laser Induced Voltage (LIV) of La2/3Ca1/3MnO3:Ag0.05 Thin Films Grown on LaAlO3 Substrates

Liu

Yan

Chen

et al. 2013

AMR

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“…For this study, commercial (100) SrTiO 3 single crystals like those used in previous studies [19,20] were annealed at a fixed temperature between 550 and 800 • C during 30 min at 10 −7 Torr in order to produce a n-type doping on these crystals [16,20]. Oxygen diffusion coefficients [21][22][23] of D ≈ 10 −5 -10 −6 cm 2 s −1 warranty a reduction in the whole volume (2.5 mm × 2.5 mm × 0.5 mm) of the STO single crystals.…”

mentioning

confidence: 99%

Light-induced metal-insulator transition inSrTiO3by photoresistance spectroscopy

et al. 2015

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Photoresistivity and its spectral response has been systematically studied in oxygen deficient SrTiO3 single crystals for a wide range of resistivities, ρ, and carrier densities, n. At roomtemperature we have found a persistent photoresistance that gradually decreases as ρ is diminished or n is increased in addition to relaxation times of seconds to a few minutes suggesting that trapping of carriers is playing a major role. An analysis of the photoresistance excitation spectra shows two distinctive features that are related to the indirect gap of SrTiO3 at (3.25 ± 0.04) eV and to a direct transition at (3.40 ± 0.03) eV. The photoresistive crystals present a temperature dependent resisitivity under illumination that experiences a metal-insulator transition below T ∼ 85 K. Lowtemperature photoresistance spectrum reveals as a suitable technique to understand the origin of this transition, pointing to an enhanced efficiency of the ∼ 3.25 eV gap to promote electrons to the bottom of the conduction band.

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“…Several techniques have been used for their fabrication: molecular‐beam epitaxy (MBE) and atomic layer deposition (ALD) mainly for epitaxial films; whereas RF magnetron sputtering and wet chemical processes principally for polycrystalline films . Pulsed laser deposition (PLD) and chemical vapor deposition (CVD) are versatile techniques that can be used both for the growth of epitaxial and polycrystalline films …”

Section: Introductionmentioning

confidence: 99%

Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices

Pla

Jiménez

Burriel

2017

Adv Materials Inter

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The hottest and most interesting state‐of‐the‐art research activities carried out in manganite thin films grown by metal‐organic chemical vapor deposition (MOCVD) are reported. The main strategies to tailor their physical properties, such as the impact of the substrate‐induced strain, the defect density, or the influence of stoichiometry in the nanostructured films, are highlighted. Relevant examples of their implementation and integration in miniaturized devices aiming to their future use in information storage, field‐effect sensing, and spintronics applications, are also presented.

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Correlation between structural and transport properties of La0.5Ca0.5MnO3 thin films grown by PLD

Cited by 13 publications

References 9 publications

Effects of Film Thickness on Laser Induced Voltage (LIV) of La<sub>2/3</sub>Ca<sub>1/3</sub>MnO<sub>3</sub>:Ag<sub>0.05</sub> Thin Films Grown on LaAlO<sub>3</sub> Substrates

Effects of Film Thickness on Laser Induced Voltage (LIV) of La<sub>2/3</sub>Ca<sub>1/3</sub>MnO<sub>3</sub>:Ag<sub>0.05</sub> Thin Films Grown on LaAlO<sub>3</sub> Substrates

Light-induced metal-insulator transition inSrTiO3by photoresistance spectroscopy

Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices

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