Correlation between stress and structure in chemically vapour deposited silicon nitride films

Growth and characterization of silicon nitride films for optoelectronics applications

“…As the substrate temperature increases, the N-H/Si-N ratio decrease and silicon rich silicon nitride films are obtained. Less Si-N bonds are formed and stress is less tensile [11,31]. Fig.…”

“…the film becomes less tensile [11]. Noskov et al [31] have reported that the tensile stress in Si 3 N 4 films deposited by atmospheric pressure chemical vapour deposition (AP-CVD) from silane and ammonia are caused by the hydrogenation during the film deposition and more precisely by the shrinkage of the films caused by the dissociation of the Si-H and N-H bonds and the rearrangement of the dangling bonds to stable Si-N bonds. The tensile stress in the films can be also explained by Noskov et al consideration.…”

Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

“…The shrinkage of the film caused by the dissociation of Si-H and Si-N-H bonds and the rearrangement of the dangling bonds to form Si-Si and Si-N bonds are responsible for tensile stress. 9 Therefore, in the case of NIDOS deposition, the residual stress increases with the nitrogen doping, i.e., with the gas ratio. However, the gas ratio increase also prevents NIDOS film from crystallizing and is therefore responsible for a polycrystalline/ amorphous transition ͑see later͒.…”

Simulação multifísica utilizando método dos elementos finitos auxiliando interativamente a fabricação de moduladores eletro-ópticos em substratos de Bi₄Ge₃O₁₂.

“…A tensão térmica, σ th , que depende da diferença dos coeficientes de expansão térmica linear do filme e do substrato, é calculada pela equação abaixo [122,123]: Para calcular a tensão intrínseca é usada a equação de tensão total, que é a soma das duas componentes principais, isto é, σ th mais tensão intrínseca (σ i ), conforme a equação abaixo:…”