Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S

Salem, Mohamed Mongi Ben; Bouzgarrou, S.; Sghaier, N.; Kalboussi, Adel; Souifi, A.

doi:10.1016/j.mseb.2005.09.047

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…2 (left side) the value of activation energy of traps was determined as ΔE = 0.63eV. This result is consistent with the C-DLTS measurements [4]. Another small departure from strictly 1/f spectra we observed around temperature 50 K corresponding to shallow impurity level, presumably carbon, with activation energy about 50 meV.…”

Section: Temperature Dependence Of Noisesupporting

confidence: 89%

1/f noise models and low‐frequency noise characteristics of InAlAs/InGaAs devices

Pavelka

Tacano

Tanuma

et al. 2010

Phys. Status Solidi (c)

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Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1‐xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experimental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes. The 1/f phonon energy partition fluctuation model predicts the value of Hooge parameter given as the ratio of the lattice constant and mean free path and several p‐type and n‐type samples reveal corresponding values of αH ≅ 0.5 and αH ≅ 4×10‐3, respectively. Most of the lattice‐matched n‐type samples however give much lower αH of about 10‐5 for temperature below 200 K, which is closer to the quantum 1/f noise theory limit. At elevated temperatures g‐r noise was observed with trap activation energy 0.63 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Temperature Dependence Of Noisesupporting

confidence: 89%

1/f noise models and low‐frequency noise characteristics of InAlAs/InGaAs devices

Pavelka

Tacano

Tanuma

et al. 2010

Phys. Status Solidi (c)

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“…10) shows the presence of one peak at a temperature of about 200K. We can then confirm the correlation between defect "B" observed by C-DLTS technique with the first parasitic Kink effect observed in I ds (V ds ) characteristics, in our previous work [27].…”

Section: Current-voltage Static Measurementssupporting

confidence: 84%

Experimental and Theoretical Study of Parasitic Effects in InAlAs⁄InGaAs⁄InP HEMT′s

Bouzgarrou¹

2013

AJPA

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A detailed study of electrically active defects present in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is presented. Current and capacitance Deep Level Transient Spectroscopy (I-DLTS and C-DLTS) techniques are used for the identification of active electrical defects. A notable correlation between deep levels observed by I-DLTS and C-DLTS results and the contribution of parasitic effects (Kink and Hysteresis effects) on output characteristics was evidenced. A new model for Kink effect is presented on InAlAs / InGaAs / InP HEMT's. This model uses a new polynomial dependence of sheet carrier concentration, on bias and temperature of device structure to calculate I ds-V ds characteristics. The simulation model enables us to confirm that the Kink parasitic effect in I ds-V ds characteristics is strongly correlated by trapping and detrapping mechanisms. Experimental and theoretical results obtained by the new model are in good agreement.

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“…Theoretically, the kink effect was coarsely described in various kind of FETs, like Si MOSFETs, GaAs MESFETs and AlGaN/GaN high electron mobility transistors (HEMT's) [18,19]. Many research experiences are directed toward understanding and eliminating these parasitic effects and minimizing the trapping effects [20,21]. In this part, we will report the parasitic effects, observed in output characteristics I ds -V ds namely kink effect of GaN-based HEMT.…”

Section: Kink Effect In Algan/gan Hemtsmentioning

confidence: 99%

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

Charfeddine¹,

Belmabrouk²,

Zaïdi³

et al. 2012

JMP

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A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current

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Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S

Cited by 4 publications

References 13 publications

1/f noise models and low‐frequency noise characteristics of InAlAs/InGaAs devices

1/f noise models and low‐frequency noise characteristics of InAlAs/InGaAs devices

Experimental and Theoretical Study of Parasitic Effects in InAlAs⁄InGaAs⁄InP HEMT′s

2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

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