Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Tsai, Chuen-Tinn; Li, K. H.; Kinosky, D.; Qian, R.; Hsu, Tsan-sheng; Irby, J.; Banerjee, S.; Tasch, A.F.; Campbell, Joe C.; Hance, B. K.; White, John

doi:10.1063/1.107190

Cited by 254 publications

(47 citation statements)

References 18 publications

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“…Therefore, we Experimental correlation between the PL properties of PS and the hydrogenated Si species has been reported by several authors. 3,10) However, our results indicate that Si-O and Si-OH rather than Si-H x contribute to the PL. Thus, it is likely that the observed PL is not directly associated with specific hydrogenated Si compounds.…”

Section: Differences In Pl Spectral Change By Exposure To Hcontrasting

confidence: 53%

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In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H2O and /O3

2003

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Photoluminescence (PL), Raman, and transmission IR spectral measurements of porous silicon (PS) have been carried out during exposure to thermoelectrons and also subsequent exposure to H atoms, H 2 O and O 3 . The PL band of as-anodized PS was significantly decreased by the first exposure to thermoelectrons accompanied by the intensity reduction of the IR bands due to hydrogenated Si species (Si-H x ; x ¼ 1{3). Upon subsequent exposure to H atoms the PL band intensity was almost recovered but never exceeded its original intensity. This PL recovery was accompanied by re-generation of Si-H x bonds. In contrast, an overshooting recovery in the PL intensity took place when thermoelectron-treated PS was exposed to H 2 O or O 3 . The obtained IR spectra showed that Si-O and/or Si-OH bonds were formed at the PS surface. These results demonstrate that the PL of the PS is quite sensitive to the oxygen-included surface bonds.

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Section: Differences In Pl Spectral Change By Exposure To Hcontrasting

confidence: 53%

“…The first model for the PL proposed by Canham (quantum confinement effect) was based on carrier recombination within a quantum wire-like structure of the PS. 1,2) The presence of luminous Silicon compounds [3][4][5][6][7][8][9][10] and non-bridging oxygen hole center (NBOHC) 11,12) have also been proposed for explanation of the PL.…”

Section: Introductionmentioning

confidence: 99%

In-situ Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H2O and /O3

2003

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“…2 -4 Owing to the indirect band in Si, efficient emission has not been supposed in Si nanostructures, so different models have been proposed to account for the strong luminescence of porous Si, such as the quantum confinement model, 1,5 -7 which is in good agreement with the absorption band of nanosilicon. However, the emission shows a strong dependence on the adsorbed surface species and deviations from the quantum confinement model, so the quantum confinement model was modified to include the localized excitons 7 or surface states, 5 excited chemical species such as silicon hydride SiH x , 8,9 siloxene Si 6 O 3 H 6 derivatives 10 and silanones containing Si O. 11 Moreover, emissions from amorphous sites such as a-Si : H 12,13 or a-Si : O : H were also indicated, 14 therefore it is necessary to distinguish or verify such complicated models.…”

Section: Introductionmentioning

confidence: 99%

Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon

Zou

Dai

Xie

2004

Surface & Interface Analysis

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In this report the temperature-dependent photoluminescence spectra, Fourier transform infrared (FTIR) spectra and time-resolved FTIR spectra of freshly prepared porous silicon and oxidized porous silicon are examined. The experimental results indicate that there is a gradual transformation of electronic states with ageing in air, because ageing led to the surface oxidation and size reduction of Si nanostructures. This surface variation from hydrogen to oxygen during ageing leads to a red shift of the emissions. A clear quantum-confinement effect exists for both H-and O-capped porous silicon but the emissions in O-capped porous silicon show clear polaronic nature. The photoinduced polaron is evidenced by the time-resolved FTIR results. A reversible H-detrapping process in silicon wafer occurs with temperature, which influences the conduction of silicon wafer and the photoluminescence of as-prepared porous silicon due to the carrier density changes.

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“…Numerous models have been proposed to illustrate the luminescence mechanism including quantum confinement model [1], silicon instrinsic surface state model [2], special luminescence materials (for example, siloxene [3], SiH x complexes [4], polysilanes [5] or defects related to oxygen [6] or silanone-based oxyhydrides [7]), quantumconfinement/luminescence-center model [8,9]. Although the origin of the PL is still controversial, it is usually accepted that surface structure and composition of nanoscale silicon can play a larger role in influencing the photoluminescence (PL) properties of PS.…”

mentioning

confidence: 99%

“…4a±c. On the other hand, while increasing the OH ± concentration, the process that OH ± attacks silicon hydrides becomes dominating and results in producing SiO 2 or Si(OH) 4 . The changes of the FTIR absorption from 512 to 460 cm ±1 and the observation of the new peaks at 850 and 1108 cm ±1 related to Si±O further confirmed this proposal (Fig.…”

mentioning

confidence: 99%

Correlation between the H+ Concentration in the Electrolyte and the Photoluminescence of Porous Silicon

Xu¹,

Guo²,

Liu³

et al. 2000

phys. stat. sol. (a)

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We have investigated the photoluminescence (PL) properties of porous silicon (PS) samples prepared in a 20% HF±ethanol electrolyte with different H concentration by varying the added HCl or NH 3 Á H 2 O concentration in the range of 0±6 mol/l at a constant anodic current density. The PL spectra continuously blueshift with increasing NH 3 Á H 2 O concentration or decreasing HCl concentration in electrolyte. Meanwhile, the infrared absorption associated with Si±O gradually increases with the NH 3 Á H 2 O concentration. Raman scattering results indicate that the average particle sizes of the PS samples have no obvious evolution with varying H concentration in electrolyte. These experimental results strongly support that light emission of PS originates from luminescent centers.Introduction The observation of strong visible light emission from porous silicon (PS) has attracted much attention because of its potential application in Si-based optoelectronic devices [1]. Numerous models have been proposed to illustrate the luminescence mechanism including quantum confinement model [1], silicon instrinsic surface state model [2], special luminescence materials (for example, siloxene [3], SiH x complexes [4], polysilanes [5] or defects related to oxygen [6] or silanone-based oxyhydrides [7]), quantumconfinement/luminescence-center model [8,9]. Although the origin of the PL is still controversial, it is usually accepted that surface structure and composition of nanoscale silicon can play a larger role in influencing the photoluminescence (PL) properties of PS. Indeed, a variety of post-treatment methods, including thermal oxidation, chemical oxidation, surface modification, etc. have been performed in an attempt to stabilize or modify the PL properties of PS [10,11]. However, previous experimental studies of the influence on the PL properties of PS by the H concentration of electrolyte are scarce.In this paper, the correlation of the H concentration in electrolyte and the PL properties has been investigated by varying the added HCl and NH 3 Á H 2 O concentration at a constant anodic current density and a constant HF concentration. A continuous blueshift of the PL from PS with decreasing the H concentration has been observed. Furthermore, the origin of the PL is discussed.

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Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Cited by 254 publications

References 18 publications

<I>In-situ</I> Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H<SUB>2</SUB>O and /O<SUB>3</SUB>

<I>In-situ</I> Photoluminescence, Raman, and IR Spectral Study of Porous Silicon during Exposure to Thermoelectrons/H atoms, /H<SUB>2</SUB>O and /O<SUB>3</SUB>

Carrier density and confined polaron effects in the photoluminescence of fresh and oxidized porous silicon

Correlation between the H+ Concentration in the Electrolyte and the Photoluminescence of Porous Silicon

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