Correlation between photoluminescence and infrared absorption spectra of oxidized nanoscale silicon clusters

Abstract

We report in situ photoluminescence and ex situ Fourier transform infrared spectra of nanoscale silicon clusters exposed to atomic hydrogen, molecular oxygen, and humidified argon. Comparisons between infrared absorption spectra of fresh and aged samples indicate that photoluminescence efficiency is correlated with a stoichiometric oxide shell and the presence of Si dangling bond passivants at the core/oxide interface. Photoluminescence quenching is demonstrated in efficiently luminescing samples upon exposure to atomic hydrogen with recovery of photoluminescence occurring upon subsequent exposure to air. The photoluminescence quenching and recovery is correlated with a partial quenching and recovery of absorption due to interfacial silane groups. The correlations between photoluminescence and infrared absorption spectra, together with the hydrogen quenching results, provide evidence that radiative recombination in these samples is associated with interfacial oxide-related defects.

Generation and Quenching of Luminescence in n-Type Porous Silicon/Solution Diodes: Role of Adsorbed Hydrogen

“…Allongue et al have shown that deuterium is incorporated into n-type porous Si under conditions of cathodic polarization. Finally it is interesting to note that Lowe-Webb et al report the rapid quenching of efficient visible photoluminescence from nanoscale silicon clusters upon exposure to atomic hydrogen. Subsequent photooxidation in air restored the light emission.…”

Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation

“…13) The origin of the 2100 cm À1 peak is reported to be Si-H bonds on the surface or Si-H 2 bonds in the bulk. [16][17][18] the hydrogen concentration of our sample prepared at 270 -1100 Pa was estimated from integrated IR absorption spectra of Si-H bonds using a Langford factor 19) and was approximately 20 at. %.…”

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

“…3 Among the many techniques of producing Si nanoclusters such as wet chemical etching, 1 laser ablation, 4,5 and gas phase synthesis, 6 precipitating Si nanoclusters out of silicon-rich silicon oxide ͑SRSO͒ has been used extensively [7][8][9][10][11][12][13][14] because it offers the advantage of creating robust, well-passivated Si nanocrystals in a manner compatible with conventional Si processing technologies. Indeed, there already has been a report of optical gain in Si nanocrystals produced in this manner.…”