Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Liu, Baiyin; Xu, Fujun; Wang, Jiaming; Lang, Jing; Wang, Liubing; Fang, Xuzhou; Yang, Xuelin; Kang, Xiaoning; Wang, Xinqiang; Qin, Zhixin; Ge, Weikun; Shen, Bo

doi:10.1016/j.spmi.2021.107141

Cited by 8 publications

(8 citation statements)

References 30 publications

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“…As such, the growth time of n-AlGaN can be shortened by 1.1 h μm −1 in comparison with the conventional rate of 0.65 μm h −1 . 12 For n-AlGaN on 0.5° miscut sapphire, the peak values of reflectance remain constant during n-AlGaN growth, suggesting a smooth surface dominated by the expected two-dimensional mode. Meanwhile for n-AlGaN on 0.2° one, the declined reflectance indicates roughening of the surface morphology, 23,24 which is attributed to the variation of the growth mode.…”

Section: Resultsmentioning

confidence: 89%

“…3(c). 12,29 Correspondingly, the conductivity of n-AlGaN on 0.2°miscut sapphire is much lower, which will result in a higher operating voltage of DUV-LEDs, since the lateral resistance of n-AlGaN is an important part of the series resistance. 3,5 Fig.…”

Section: Resultsmentioning

confidence: 99%

“…[7][8][9][10] However, such a low temperature is unfavorable for the two-dimensional growth of Al-rich AlGaN, hence the growth rate is limited to obtain a smooth surface. 11,12 On conventional sapphire with a miscut angle of 0.2°, the upper-bound growth rate for the two-dimensional growth of Al 0.65 Ga 0.35 N is experimentally determined to be around 0.65 μm h −1 at 1100 °C. 12 Also it can be expected that the critical rate will further decrease at a lower temperature to pursue better electrical properties in n-AlGaN.…”

Section: Introductionmentioning

confidence: 99%

“…11,12 On conventional sapphire with a miscut angle of 0.2°, the upper-bound growth rate for the two-dimensional growth of Al 0.65 Ga 0.35 N is experimentally determined to be around 0.65 μm h −1 at 1100 °C. 12 Also it can be expected that the critical rate will further decrease at a lower temperature to pursue better electrical properties in n-AlGaN. 9,13 As such, the growth of thick n-AlGaN (1.5-3.5 μm 5, [14][15][16] ) occupies a quite large part of the total growth time of a typical DUV-LED structure.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Wang

Lang

et al. 2022

CrystEngComm

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Wang

Lang

et al. 2022

CrystEngComm

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“…°C. 22 Also, it can be expected that the critical rate will further decrease at a lower temperature. 23 As such, the growth of thick n-AlGaN (1.5−3.5 μm) occupies quite a large part of the total growth time of a conventional DUV-LED structure.…”

Section: ■ Introductionmentioning

confidence: 99%

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

Gao

Yang

et al. 2023

ACS Photonics

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For the first time, the n-AlGaN free deep-ultraviolet light-emitting diode (DUV-LED) with transverse electron injection by selective area regrowth (SAG) n + -GaN is demonstrated. The multiple quantum wells (MQWs) and upper layers of the transverse structure LEDs that deposited directly on the AlN template exhibit lower threading dislocation density and better surface morphology compared to conventional structure LEDs with thick n-AlGaN layer. The internal quantum efficiency of the transverse structure LED estimated by temperature-dependent photoluminescence is 95%, which is almost twice higher than that of the conventional structure LED (48%). The electroluminescence intensity of transverse structure LEDs is more than twice that of the conventional structure LEDs. Furthermore, the high crystal quality of MQWs enables transverse structure LEDs to emit shorter peak wavelengths (251−254 nm) and narrower full width at half maximums (10.1−10.7 nm). This study demonstrates that by adopting SAG n + -GaN as an electron injection layer, the n-AlGaN free transverse structure LEDs can be realized, enabling a substantial improvement in DUV-LEDs that are generally based on poor crystal quality n-AlGaN.

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Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Chen

Zhang

Liu

et al. 2023

Adv Elect Materials

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Vertical GaN-on-Si devices are promising for the next-generation high-voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack-free GaN layers and high threading dislocation density (TDD) in the layer. Buffer layers are crucial for stress control while they usually behave with poor surface morphology, which causes early stress relaxation in GaN and limited thickness. Hereby, a terrace engineering approach for the buffer layers is proposed. Through tuning the supersaturation ratio, the terrace width can be manipulated and an atomically smooth AlGaN buffer layer can be realized, which effectively reduces the compressive stress relaxation and provides a firm foundation for thick GaN growth. As a result, a 7.5 μm thick GaN drift layer with TDD as low as 8.6 × 10 7 cm −2 is achieved on Si substrates. The room temperature electron mobility of the GaN drift layer can be raised up to 1210 cm 2 V −1 s −1 . The fabricated PiN diode shows a high breakdown voltage of 1058 V as well as a high on/off ratio of 10 12 . This work thus truly demonstrates the potential of high-performance and low-cost GaN-based electronic as well as optoelectronic devices on Si platforms.

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Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Cited by 8 publications

References 30 publications

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

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