Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC

Storasta, Liutauras; Magnusson, Björn; Henry, Anne; Linnarsson, M. K.; Bergman, J. P.; Janzén, Erik

doi:10.4028/www.scientific.net/msf.433-436.423

Cited by 2 publications

(4 citation statements)

References 8 publications

(9 reference statements)

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“…In the present study an increase of the PL intensity of the PL lines was observed during the first hour of excitation. However for other samples [2][3][4], we did observe a very fast decrease of the PL line during the first few second of excitation. The PL intensity of the 3838Å line was after these few seconds constant, whereas the hydrogen related lines still were decreased in intensity.…”

Section: Pl Intensity (Cps)mentioning

confidence: 57%

“…The PL spectrum has also been observed after hydrogen plasma treatment [5]. The related PL spectrum for the 6H polytype was not reported in these previous works [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 89%

“…It was also proposed to be related to the electrically passivated boron [3]. This PL spectrum was observed on some samples after Secondary Ion Mass Spectrometry (SIMS) where it was not revealed before SIMS [2,3]. In this context it should be noted that it has recently been demonstrated that large quantities of H are introduced to samples during SIMS measurements [4].…”

Section: Introductionmentioning

confidence: 95%

“…When the peak is sharp (less than 0.5 meV) the 3838Å spectrum is likely due to an isolelectronic bound exciton at a complex defect [2]. It was also proposed to be related to the electrically passivated boron [3]. This PL spectrum was observed on some samples after Secondary Ion Mass Spectrometry (SIMS) where it was not revealed before SIMS [2,3].…”

Section: Introductionmentioning

confidence: 99%

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Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC

Henry

Janson

Janzén

2004

MSF

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We report the results of a photoluminescence (PL) study of the properties of a boundexciton (BE) line observed at about 3838Å in the PL spectrum of 4H-SiC and at 4182Å in 6H-SiC. Both spectra have almost the same phonon structure containing localized modes. The temperature dependences show that the no-phonon (NP) lines have at least three excited states higher in energy. The most intense high-temperature lines do not split under applied magnetic field whereas the low temperature lines split into three components when the magnetic field is applied in the direction perpendicular to the c-axis. Time-resolved PL reveals several hundreds microseconds long lifetime at 2K with a second component an order of magnitude faster. Our results can be explained by an excitonic recombination at an isoelectronic center but are in conflict with the previous association of the 3838Å line in 4H-SiC with the recombination of the bound exciton at the neutral shallow boron acceptor. The luminescence in our samples is increasing with excitation time. This luminescence is not observed from our as-grown material but appears after SIMS analysis. The as-grown material used was intentionally boron-doped epilayers.

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Section: Pl Intensity (Cps)mentioning

confidence: 57%

“…The PL spectrum has also been observed after hydrogen plasma treatment [5]. The related PL spectrum for the 6H polytype was not reported in these previous works [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 89%