Correlation between deep level traps and reverse recovery of GaAs p–i–n diodes before and after neutron irradiation
M. M. Sobolev,
F. Y. Soldatenkov,
V. A. Kozlov
Abstract:Using the deep-level transient spectroscopy and reverse recovery method, the minority carrier lifetime in the base n0-layers of high-voltage GaAs p+–p0–i–n0–n+-diodes grown by the liquid phase epitaxy in argon atmosphere has been estimated before and after irradiation by neutrons with the energy of 1 MeV and the fluence of 1.6 × 1014 cm–2. Correlation between the values of the minority carrier lifetime determined by both methods was found. EL2 defects where shown to govern the dynamic switching characteristics… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.