Correlation between Access Polarization and High Endurance (˜ 10¹² cycling) of Ferroelectric and Anti-Ferroelectric HfZrO₂

Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

“…Since VOs are located near the interface of TiN and HZO to stabilize the AFE tetragonal phase, the higher AFE cycling number is measured and compared with the FE to validate the robust AFE endurance, as shown in Fig. 2(d) [7], [9]. ⃝ after cycling of the same polarity is observed; however, d ⃝ maintains the initial state with the opposite polarity.…”

“…The available ratio of AFE switching polarization is obviously higher than that of FE with t p < 1 µs [6], [7]. To maintain high FE and AFE switching ratios, the pulse condition was selected as t p = 1 µs with 1/4 MHz for subsequent recovery testing.…”

“…Subsequently, the redistribution of VO can be performed by high E-field stimulation to achieve recovery from domain pinning [3], [4]. For antiferroelectric (AFE) materials, a faster dipole switching speed and robust endurance have been reported compared with FE materials [6], [7]. The AFE fatigue is experimentally measured and follows the model with bipolar cycling and low E-field operation as shown in Fig.…”

“…For the unipolar sweeps, Zr = 50% and 90% show a nearly paraelectric and single loop, respectively[8]. (c) Available ratio of AFE switching polarization is obviously higher than FE with t p < 1 µs [6],[7]. (d) Higher AFE cycling number is measured and compared with FE cycling to validate the robust AFE endurance.…”