Correlation between a dielectric anomaly and a phase transition of sintered phosphorus doped WO₃ ceramics

Abstract

Phosphorus doped WO 3 (P x W 1¹x O 3 ) ceramics were fabricated by a solid state reaction. Temperature and frequency dependence of dielectric properties for the P x W 1¹x O 3 (x = 00.15) ceramics were evaluated at the temperature between ¹20 to 80°C. The dielectric constant of the P 0.05 W 0.95 O 3 ceramic was 36005800 at the frequency range from 1 kHz to 1 MHz in the room temperature, and the dielectric loss of the P 0.05 W 0.95 O 3 ceramic were less than 0.1 at the frequency of higher than 160 kHz. The dielectric anomaly peak of the WO 3 ceramic has been observed at 20°C, and the dielectric anomaly peak of the P 0.05 W 0.95 O 3 ceramic has been observed at about 0°C. The interaction between temperature dependence of dielectric properties (dielectric anomaly) ceramics and structural change of the WO 3 and P 0.05 W 0.95 O 3 were evaluated by Raman spectra.