Correlating Molecular Structure to Field-Effect Mobility: The Investigation of Side-Chain Functionality in Phenylene−Thiophene Oligomers and Their Application in Field Effect Transistors
Abstract:Short conjugated phenylene (P)−thiophene (T) oligomers with varying α and ω alkyl and alkoxy
substitutions were synthesized using Stille and Suzuki coupling reactions to investigate the correlation
between end-group structure and electronic properties on P2TP and P3TP conjugated cores. Several soluble
oligomers were synthesized with 5,5‘-bis(4-n-octylphenyl)-2,2‘-bithiophene (do-PTTP) showing the highest
mobility (μ = 0.18 cm2 V-1 s-1) and on/off ratio of 107 at a substrate temperature of 50 °C. Thin film
morp… Show more
“…Organic Semiconductors: All of the semiconductor materials used were synthesized in house as described elsewhere [26,27], and purified by sublimation using a three-temperature zone furnace (Lindberg/Blue Thermo Electron Corporation, White Deer, PA) at a reduced pressure of 10 À6 Torr (1 Torr ¼ 133.3 Pa) or less. Surface Modification of Device and Shearing Substrates: For OTS and PTS device substrates we used highly-doped n-type (100) Si wafers (<0.004 V cm) with a 300 nm dry thermal oxide gate dielectric (capacitance C i ¼ 10 nF cm À2 ).…”
Section: Methodsmentioning
confidence: 99%
“…The syntheses of these materials are reported elsewhere. [26,27] This collection of compounds forms a library suitable to test the generality of the SS method.…”
mentioning
confidence: 99%
“…This PVP film was cured by heating to 100 8C for 3 h to give a 25 nm PVP with capacitance C i $ 165 nF cm À2 [26]. The shearing tool was a Si wafer with a native oxide which was cleaned with piranha mixture, rinsed with water and dried with nitrogen.…”
Solution shearing can deposit organic semiconductor thin films with large, aligned crystals from a range of materials. Top‐contact transistors fabricated on solution‐sheared thin films outperform equivalent devices fabricated through drop‐casting. Our facile, versatile, and scalable technique requires small amounts of semiconductor material and can be used for large‐area device fabrication, or as a rapid screening tool for high‐mobility compounds.
“…Organic Semiconductors: All of the semiconductor materials used were synthesized in house as described elsewhere [26,27], and purified by sublimation using a three-temperature zone furnace (Lindberg/Blue Thermo Electron Corporation, White Deer, PA) at a reduced pressure of 10 À6 Torr (1 Torr ¼ 133.3 Pa) or less. Surface Modification of Device and Shearing Substrates: For OTS and PTS device substrates we used highly-doped n-type (100) Si wafers (<0.004 V cm) with a 300 nm dry thermal oxide gate dielectric (capacitance C i ¼ 10 nF cm À2 ).…”
Section: Methodsmentioning
confidence: 99%
“…The syntheses of these materials are reported elsewhere. [26,27] This collection of compounds forms a library suitable to test the generality of the SS method.…”
mentioning
confidence: 99%
“…This PVP film was cured by heating to 100 8C for 3 h to give a 25 nm PVP with capacitance C i $ 165 nF cm À2 [26]. The shearing tool was a Si wafer with a native oxide which was cleaned with piranha mixture, rinsed with water and dried with nitrogen.…”
Solution shearing can deposit organic semiconductor thin films with large, aligned crystals from a range of materials. Top‐contact transistors fabricated on solution‐sheared thin films outperform equivalent devices fabricated through drop‐casting. Our facile, versatile, and scalable technique requires small amounts of semiconductor material and can be used for large‐area device fabrication, or as a rapid screening tool for high‐mobility compounds.
“…0.55 eV whereas the monoalkylated homologues show still an increase of ∆E. Assuming that (i) the situation in the aggregates is a mirror image of the porperties in solid state (thin film) and that (ii) the amount of ∆E is a measure for the intermolecular interaction (packing effects) and thus for electron transport (mobility) properties it is expected that (a) oligomers with linear substituents are much superior to the homologues with branched alkyl chains [27] and (b) improvement of electronic properties might level off at around five to seven thiophene units for electronic applications like OFETs. [28] Figure 5.…”
Five homologous series of α-and α,ω-substituted oligothiophenes up to an undecamer with branched and linear alkyl chains, respectively, are presented. These series are compared with respect to self-organisation in solution and in solid state. UV/Vis absorption data for the long disubstituted branched oligothiophenes indicate the formation of aggregates in solution, expressed by a bathochromic shift of the absorption maximum and the appearance of shoulders. These changes in the spectra are obtained by variation of the solvent quality and/or the temperature. Contrary, the linear disubstituted oligothiophenes exhibit the formation of H-aggregates in solution indicated by a hypsochromic shift in the UV/Vis spectra. Results from fluorescence spectroscopy support the existence of aggregates. No aggregation phenomena
“…[14] Since the report of the first organic thin-film transistor (TFT), efforts have been made to chemically functionalize the conjugated core, in the hope of elucidating structure-property relationships that have been well-established for inorganic materials. [7,[15][16][17] For example, Garnier and co-workers showed that adding a linear hexyl group at the a-position of sexithiophene (6T) resulted in a 25-fold increase in TFT mobility. [11] This was explained by the ordering that resulted from the natural association of the alkyl side chains and the conjugated core of each molecule with that of its neighbor in the thin film.…”
A series of compounds from the tetraceno[2,3‐b]thiophene and the anthra[2,3‐b]thiophene family of semiconducting molecules has been made. Specifically, synthetic routes to functionalize the parent molecules with bromo and then hexyl groups are shown. The bromo‐ and hexyl‐functionalized tetraceno[2,3‐b]thiophene and anthra[2,3‐b]thiophene were characterized in the top‐contact thin‐film transistor (TFT) geometry. They give high mobilities, ranging from 0.12 cm2 V−1 s−1 for α‐n‐hexylanthra[2,3‐ b]thiophene to as high as 0.85 cm2 V−1 s−1 for α‐bromotetraceno[2,3‐b]thiophene. Notably, grain size increases, going from the shorter anthra[2,3‐b]thiophene core to the longer tetraceno[2,3‐b]thiophene core, with a corresponding increase in mobility. The transition from undesirable 3D to desirable 2D thin‐film growth is explained by the increase in length of the molecule, in this case by one benzene ring, which results in an increase in intralayer interactions relative to interlayer interactions.
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