Correlated Metal SrVO3 Based All-Solid-State Redox Transistors Achieved by Li+ or H+ Transport

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Higuchi, Tohru; Terabe, Kazuya

doi:10.7566/jpsj.87.034802

Cited by 8 publications

(21 citation statements)

References 25 publications

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“…When a positive VG was applied, the drain current was almost constant (drain current enhancement : 0.06 %). This behavior was similar to that observed in SVO (0.2 %) [22]. The positive VG corresponds to the Li + insertion into CVO thin film.…”

Section: Resultssupporting

confidence: 85%

“…The LZSO thin film was found to be almost free of droplets. The film thickness could thus be reduced from 2 μm needed in previous report to 600 nm in the present study [22]. The improvement was owing to a difference of wavelength of the laser used for PLD [31,32].…”

Section: Resultsmentioning

confidence: 59%

“…Many droplets cause by the short circuit between electrodes since the droplets form pinhole defects through electrolyte thin films. Actually, we needed very thick electrolyte film (2 μm) for prevention of the short circuit [22]. .…”

Section: Resultsmentioning

confidence: 99%

“…The electrical conduction characteristic was accompanied by considerable hysteresis. This is attributed to unsteady state ionic diffusion in the CVO thin film, in which the H + ion flux and the H + ion concentration gradient in CVO thin film are not in steady state [22]. This suggests that the electrical carrier was modulated by H + ion transport in the CVO thin film, with comparably slow kinetics featuring ion migration-related phenomena, at low temperatures such as RT [42][43][44].…”

Section: Resultsmentioning

confidence: 99%

“…The allsolid-state redox transistor is particularly desirable compared to one with an ionic liquid since the all-solidstate configuration enables high compatibility with other peripheral devices. In the previous work, we reported that the electronic conductivity in SrVO3 (SVO) thin film was modulated by all-solid-state redox transistor using Li + or H + transport [22,23]. While the H + ion insertion leads to a large resistivity enhancement of 9%, the effect of Li + ion insertion is a very small resistivity enhancement of 0.2%.…”

Section: Introductionmentioning

confidence: 99%

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Conductivity Modulation by CaVO3-based All-solid-state Redox Transistor with Ion Transport of Li+ or H+

Takayanagi

Tsuchiya

Namiki

et al. 2019

Trans. Mat. Res. Soc. Japan

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CaVO3 (CVO)-based all-solid-state redox transistor with a Yttria-stabilized-ZrO2 (YSZ) H + ion conductor was fabricated. The electronic conductivity of the CVO was modulated by controlling oxygen nonstoichiometry due to H + insertion and desertion (redox reaction). The variation in drain current was larger than that of SrVO3 (SVO)-based all-solid-state redox transistor. For comparison, the CVO-based device with a Li2O-ZrO2-SiO2 (LZSO) Li + conductor was also investigated. The LZSO device also showed larger drain current enhancement than the SVO device. Controlling oxygen nonstoichiometry due to the redox reaction (H + or Li + insertion and desertion) is found to be effective for modulating electronic conductivity of CVO.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Conductivity Modulation by CaVO3-based All-solid-state Redox Transistor with Ion Transport of Li+ or H+

Takayanagi

Tsuchiya

Namiki

et al. 2019

Trans. Mat. Res. Soc. Japan

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Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Han

Shang

et al. 2020

Advanced Intelligent Systems

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With the rapid development of the Internet of Things, the amount of data we involved in our daily life is growing exponentially, which poses significant challenges for data processing and transmission to the conventional terminal sensors that passively acquire external data. Inspired by biological sensory nervous systems, building artificial intelligent sensory systems with both sensing and computing capability is regarded as a promising way to address these challenges, by which the acquired data can be preprocessed locally and timely before transmitting them to the remote server for further processing. Ion-gated transistors (IGTs), which have been widely used in sensors and have been recently investigated for neuromorphic computing, exhibit great potential in this domain. Herein, the essential operation principles, device structures, and electrical characteristics of IGT are introduced, and the recent developments in biosensors, neuromorphic computing, and intelligent sensors with near-sensor computing and in-sensor computing modes are summarized. To conclude, the current challenges and future development of IGT for intelligent sensory systems are presented.

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Room temperature fabrication of highly proton conductive amorphous zirconia-based thin films achieved through precise nanostructure control

et al. 2023

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Correlated Metal SrVO₃ Based All-Solid-State Redox Transistors Achieved by Li⁺ or H⁺ Transport

Cited by 8 publications

References 25 publications

Conductivity Modulation by CaVO<sub>3</sub>-based All-solid-state Redox Transistor with Ion Transport of Li<sup>+</sup> or H<sup>+</sup>

Conductivity Modulation by CaVO<sub>3</sub>-based All-solid-state Redox Transistor with Ion Transport of Li<sup>+</sup> or H<sup>+</sup>

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Room temperature fabrication of highly proton conductive amorphous zirconia-based thin films achieved through precise nanostructure control

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