Correction of finite slit width effects on Raman line widths

Tanabe, K.; Hiraishi, Jiro

doi:10.1016/0584-8539(80)80141-3

Cited by 106 publications

(45 citation statements)

References 39 publications

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“…The frequency was calibrated by measuring the 520.7 cm À1 band of silicon and the spectral lines of a Ne lamp before and after the sample measurements. The effect of the finite slit width on the measured linewidth given as the full width at half maximum (FWHM) was corrected by the method of Tanabe and Hiraishi (1980).…”

Section: Raman Spectroscopymentioning

confidence: 99%

Complex history of a zircon aggregate from lunar breccia 73235

Pidgeon

Nemchin

Bronswijk

et al. 2007

Geochimica et Cosmochimica Acta

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Results are reported of an investigation of the age and origin of the exceptional zircon aggregate in an anorthositic clast from lunar breccia 73235. Cathodoluminescence and birefringence images show that the aggregate consists of numerous angular fragments of sector zoned primary zircon in a matrix of secondary zircon with an overall texture that resembles a pseudotachylite. SIMS U-Pb analyses of the primary fragments and the matrix yielded two clearly defined ages, an age of 4.315 ± 0.015 Ga and initial Th/U ratio of 0.21-0.35 for the primary zircon and an age of 4.187 ± 0.011 Ga and Th/U of 0.04-0.17, for the secondary zircon matrix. A Raman spectroscopic study the secondary matrix zircon was undertaken to investigate its structure. Results showed that the matrix has a zircon structure but there is also evidence for the presence of an amorphous component. Implications of the structural and U-Pb age data are discussed in terms of the origin and evolution of the aggregate and the history of lunar events. It is proposed that an original single, millimetresized, sector zoned zircon, formed at 4.31 Ga, was subjected to a severe shock event at 4.18 Ga. This event resulted in the fracturing of the zircon, the displacement and rotation of fragments, the compression of the aggregate to a lensoid shape, and the shock reduction of zircon to sub-micron-sized and amorphous granules in crush zones in the mosaic of fractures. Volatilisation loss of Pb and the addition of U to the secondary zircon is attributed to processes activated by the extreme thermal pulse which accompanied the 4.18 Ga shock event. Shock effects are seen in some of the primary fragments but Raman spectra of the primary and secondary zircon show no evidence for pressure-induced transformation of zircon to a scheelite structure. The zircon U-Pb system has not been affected by the ca. 3.95 Ga thermal pulse that accompanied formation of the host breccia although this event has largely reset the K-Ar systems.

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Section: Raman Spectroscopymentioning

confidence: 99%

Complex history of a zircon aggregate from lunar breccia 73235

Pidgeon

Nemchin

Bronswijk

et al. 2007

Geochimica et Cosmochimica Acta

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“…The values for the FWHM

Δ \overset{ν}{true}

are summarized in Table . The correction of the FWHM due to finite slit width has been omitted, because in this study the main focus lies on the comparison of the relative changes in the FWHM.…”

Section: Resultsmentioning

confidence: 99%

Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC

Rüsing

Wecker

Berth

et al. 2016

Phys. Status Solidi B

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Abstractauthoren Cubic gallium nitride (GaN) films are analyzed with high‐resolution X‐ray diffraction (HRXRD) and Raman spectroscopy. Several cubic GaN layers were grown on 3C‐SiC (001) substrate by radio‐frequency plasma‐assisted molecular beam epitaxy. The layer thickness of the cubic GaN was varied between 75 and 505 nm. The HRXRD analysis reveals a reduction of the full‐width at half‐maximum (FWHM) of omega scans for growing layer thicknesses, which is caused by a partial compensation of defects. The Raman characterization confirms well‐formed c‐GaN layers. A more detailed examination of the longitudinal optical mode hints at a correlation of the FWHM of the Raman mode with the dislocation density, which shows the possibility to determine dislocation densities by Raman spectroscopy on a micrometer scale, which is not possible by HRXRD. Furthermore, this Raman analysis shows that normalized Raman spectra present an alternative way to determine layer thicknesses of thin GaN films.

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“…They were 1 and 1.4 cm -1 respectively in the infrared. The slit corrections proposed by Dijkman et al [23] and Tanabe et al [24] have been applied to the measured widths. The latter are applicable up to values of the slit/bandwidth ratios larger than those for which Dijkman's expression is valid.…”

Section: Methodsmentioning

confidence: 99%