Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides

Dreyer, Cyrus E.; Janotti, Anderson; Walle, Chris G. Van de; Vanderbilt, David

doi:10.1103/physrevx.6.021038

Cited by 127 publications

(164 citation statements)

References 48 publications

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“…18,19 Dreyer et al recently show that the layered hexagonal (H) structure rather than the zincblende (ZB) structure be the reference crystal structure for the accuracy of the SP constants. 20 The H structure was thus utilized as the reference structure in this study. The SP constant was calculated by…”

mentioning

confidence: 99%

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

Liu

Sun

AlQatari

et al. 2017

Applied Physics Letters

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The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.

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mentioning

confidence: 99%

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

Liu

Sun

AlQatari

et al. 2017

Applied Physics Letters

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“…Because of the weak van der Waals bonding between layers, it has been used as a nucleation layer on sapphire for the growth of nitride LEDs and HEMTs that could be "peeled-off" and transferred to other flexible, or functional substrates 26 . Because hBN does not have spontaneous polarization, it has been used as a new reference to re-evaluate the spontaneous and piezoelectric coefficients of the nitride semiconductors 27 . A point to note is that monolayer hBN has extremely high in-plane piezoelectricity.…”

Section: Boron-based Nitridesmentioning

confidence: 99%

“…A new calculation that uses the layered (hexagonal) lattice as the non-polar reference has revised these coefficients significantly; in the new values, the differences in polarization are similar to the old values, but the absolute values are significantly different. 27 In addition to the effects of the polarization fields in electronic and photonic devices, AlN today forms the basis for bulk acoustic wave (BAW) filters for high frequency RF signals, several of which go into each cellphone. The center frequency for such filters is given by 1 is the sound velocity in the material, and is the length of the acoustic cavity.…”

Section: Nitride Extreme-piezoelectrics and Ferroelectricsmentioning

confidence: 99%

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

Jena

Page

Casamento

et al. 2019

Jpn. J. Appl. Phys.

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The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of "new" nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductorNbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.

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“…Since the polarization fields play a crucial role in the design of electronic and photonic devices, they have been recently reexamined to obtain a more accurate theoretical description [47]. However, there exists a considerable spread in the reported values of the polarization field discontinuities both in GaN=InGaN and GaN=AlGaN heterojunctions.…”

Section: Polar Rtd Modelmentioning

confidence: 99%

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

et al. 2017

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For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs), the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

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Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides

Cited by 127 publications

References 48 publications

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

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