2019
DOI: 10.1088/1361-6528/ab37a1
|View full text |Cite
|
Sign up to set email alerts
|

Corner and side localization of electrons in irregular hexagonal semiconductor shells

Abstract: We discuss the low energy electronic states in hexagonal rings. These states correspond to the transverse modes in core-shell nanowires built of III-V semiconductors which typically have a hexagonal cross section. In the case of symmetric structures the 12 lowest states (including the spin) are localized in the corners, while the next following 12 states are localized mostly on the sides. Depending on the material parameters, in particular the effective mass, the ring diameter and width, the corner and side st… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
2
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
4
4

Relationship

1
7

Authors

Journals

citations
Cited by 8 publications
(3 citation statements)
references
References 43 publications
(85 reference statements)
1
2
0
Order By: Relevance
“…5. This is in agreement with single-band self-consistent calculations [18,58], as expected from the nearly pure EL character of conduction subbands.…”
Section: B N-dopingsupporting
confidence: 91%
“…5. This is in agreement with single-band self-consistent calculations [18,58], as expected from the nearly pure EL character of conduction subbands.…”
Section: B N-dopingsupporting
confidence: 91%
“…The corner and side states are energetically separated by a gap interval that depends on the geometry and on the aspect ratio of the polygon. It increases with decreasing the shell thickness or the number of corners, and hence, in such a structure the subspace of corner states is potentially robust to many types of perturbations [53].…”
Section: Resultsmentioning
confidence: 99%
“…In particular, core-shell nanowires give rise to additional quantum effects since mobile two-dimensional electron gases (2DEGs) can form at the semiconductor-semiconductor heterojunction interface [8,9,10,11,12,13]. To fully harness the electronic properties of these systems, a wide range of material properties (such as doping density, bandgap alignment, geometry, and structural composition) may be altered to achieve spontaneous electron gas formation [14,15,16]. While the resulting parameter space is immense, theory and predictive modeling provide a guided path for determining which combination of material properties/parameters best optimizes performance of these novel nanosystems.…”
Section: Introductionmentioning
confidence: 99%