Abstract:This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd 1Ày Se-cladded Zn x Cd 1Àx Se quantum dots (y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin C… Show more
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