2010
DOI: 10.1016/j.ssc.2010.01.008
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core–shell nanowires with different shapes: Synthesis and field emission properties

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Cited by 17 publications
(8 citation statements)
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“…Field emission is one of the most fascinating properties of one-dimensional SiC nanostructured materials and has been extensively studied due to its importance both in view of fundamental science and in high-tech applications [10,67,114,181,187,189,233]. Field emission was investigated based on the SiCNWs deposited on a platinum film.…”
Section: Photonic and Optoelectronic Applicationsmentioning
confidence: 99%
“…Field emission is one of the most fascinating properties of one-dimensional SiC nanostructured materials and has been extensively studied due to its importance both in view of fundamental science and in high-tech applications [10,67,114,181,187,189,233]. Field emission was investigated based on the SiCNWs deposited on a platinum film.…”
Section: Photonic and Optoelectronic Applicationsmentioning
confidence: 99%
“…In this regard, 1D SiC/SiO 2 nanostructures with crystalline SiC core and amorphous SiO 2 shell are ideal semiconductor‐insulator heterostructures in the radial direction. The formation of such 1D heterostructures becomes increasingly important in the building blocks of complex electronic and photonic nanodevices due to excellent properties of both SiC nanowires and SiO 2 nanostructures 17–19.…”
Section: Introductionmentioning
confidence: 99%
“…In terms of size, SiC is light weight and normally has low dimensionality so it is commonly available in nano size devices [8]. This type of material achieved high evaluations in terms of mechanical strength [19], hardness [21], thermal stability [15] and conductivity [23], good thermal shock resistance [24] with low thermal expansion coefficient [9] and good wear resistance [21], [23].…”
Section: Silicon Carbide Properties and Applicationsmentioning
confidence: 99%
“…On the other hand, in electronic properties and application, it is well known as a wide band gap material. 2H-SiC possessed the largest band gap among them compared to other polytypes like 3C-SiC, 4H-SiC, and 6H-SiC [3], [8], [12], [13], [17]. The simulation prediction done by Monte Carlo showed higher electron mobility in 2H-SiC than other polytypes [25].…”
Section: Silicon Carbide Properties and Applicationsmentioning
confidence: 99%
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