Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

Yoon, Jun-Sik; Kım, Kihyun; Baek, Chang‐Ki

doi:10.1038/srep41142

Cited by 17 publications

(4 citation statements)

References 39 publications

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“…Gate-all-around (GAA) is a widely-using structure such as logic field-effect transistor (FET) due to its excellent short channel characteristics [1][2][3][4][5][6] or its high surface-to-volume ratio [7,8], 3-D NAND flash memory for bit-cost scalability [9,10], photodiode due to its waveguide effect [11,12], and gas sensor due to its high physical fill factor or surface-to-volume ratio [13,14]. Especially for logic applications, GAAFETs have been introduced by attaining good gate electronics and increasing current drivability under the same active area.…”

Section: Introductionmentioning

confidence: 99%

Gate-All-Around FETs: Nanowire and Nanosheet Structure

Yoon¹,

Jeong²,

Lee³

et al. 2021

Nanowires - Recent Progress

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DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated TCAD. There are two types of GAAFETs: nanowire (NW) FETs having the same width (WNW) and thickness of the channels, and nanosheet (NS) FETs having wide width (WNS) but the fixed thickness of the channels as 5 nm. Compared to FinFETs, GAAFETs can maintain good short channel characteristics as the WNW is smaller than 9 nm but irrespective of the WNS. DC performances of the GAAFETs improve as the Nch increases but at decreasing rate because of the parasitic resistances at the source/drain epi. On the other hand, gate capacitances of the GAAFETs increase constantly as the Nch increases. Therefore, the GAAFETs have minimum RC delay at the Nch near 3. For low power applications, NWFETs outperform FinFETs and NSFETs due to their excellent short channel characteristics by 2-D structural confinement. For standard and high performance applications, NSFETs outperform FinFETs and NWFETs by showing superior DC performances arising from larger effective widths per footprint. Overall, GAAFETs are great candidates to substitute FinFETs in the 3-nm technology node for all the applications.

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Section: Introductionmentioning

confidence: 99%

Gate-All-Around FETs: Nanowire and Nanosheet Structure

Yoon¹,

Jeong²,

Lee³

et al. 2021

Nanowires - Recent Progress

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“…Recently, synthesized Si/SiC core/shell NWs paved the way to biocompatible nanowire based sensors due to the chemically inertness and hydrophilic surface of SiC 38 . This semiconducting core/shell NWs have obtained enormous applications in the field of FET, IC circuits, logic gates, solar cells in nanoelectronic devices 22 , 37 , 39 , 40 . The versatile electronic, transport and optical properties of core/shell NWs which depend on the configuration and composition of the core and shell of the NWs have motivated us to go beyond IV-IV and III-V nanowire systems and study the electronic and transport properties of core/shell NWs with a different composition.…”

Section: Introductionmentioning

confidence: 99%

Si and Ge based metallic core/shell nanowires for nano-electronic device applications

Bhuyan

Kumar

Sonvane

et al. 2018

Sci Rep

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One dimensional heterostructure nanowires (NWs) have attracted a large attention due to the possibility of easily tuning their energy gap, a useful property for application to next generation electronic devices. In this work, we propose new core/shell NW systems where Ge and Si shells are built around very thin As and Sb cores. The modification in the electronic properties arises due to the induced compressive strain experienced by the metal core region which is attributed to the lattice-mismatch with the shell region. As/Ge and As/Si nanowires undergo a semiconducting-to-metal transition on increasing the diameter of the shell. The current-voltage (I-V) characteristics of the nanowires show a negative differential conductance (NDC) effect for small diameters that could lead to their application in atomic scale device(s) for fast switching. In addition, an ohmic behavior and upto 300% increment of the current value is achieved on just doubling the shell region. The resistivity of nanowires decreases with the increase in diameter. These characteristics make these NWs suitable candidates for application as electron connectors in nanoelectronic devices.

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“…In comparison, dielectric materials have substantially lower losses and can sustain narrow line widths and long propagation distances, but they are not generally able to confine light on the same subwavelength scale . Dielectric nanostructures, including Si nanowires (NWs), have attracted attention for their myriad photonic properties, − including the ability to trap and guide light and their potential to integrate with existing complementary metal oxide semiconductor (CMOS) device technologies. − Nanostructures designed with both dielectric and metallic materials such that a substantial fraction of the electric field intensity is preferentially localized within a dielectric region are a potential strategy to achieve deep-subwavelength confinement of incident light with lower loss, thereby combining the advantages of both materials.…”

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confidence: 99%

Epitaxially Grown Silicon Nanowires with a Gold Molecular Adhesion Layer for Core/Shell Structures with Compact Mie and Plasmon Resonances

Murphey,

Park,

Kim

et al. 2023

ACS Nano

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Noble-metal plasmonic nanostructures have attracted much attention because they can support deep-subwavelength optical resonances, yet their performance tends to be limited by high Ohmic absorption losses. In comparison, high-index dielectric materials can support low-loss optical resonances but do not tend to yield the same subwavelength optical confinement. Here, we combine these two approaches and examine the dielectric-plasmonic resonances in dielectric/metal core/shell nanowires. Si nanowires were grown epitaxially from (111) substrates, and direct deposition of Au on these structures by physical vapor deposition yielded nonconformal Au islands. However, by introduction of a molecular adhesion layer prior to deposition, cylindrical Si/Au core/shell nanostructures with conformal metal shells were successfully fabricated. Examining these structures as optical cavities using both optical simulations and experimental extinction measurements, we found that the structures support Mie resonances with quality factors enhanced up to ∼30 times compared with pure dielectric structures and plasmon resonances with optical confinement enhanced up to ∼5 times compared with pure metallic structures. Interestingly, extinction spectra of both Mie and plasmon resonances yield Fano line shapes, whose manifestation can be attributed to the combination of high quality factor resonances, Mie-plasmon coupling, and phase delay of the background optical field. This work demonstrates a bottom-up synthetic method for the production of freestanding, cylindrically symmetric semiconductor/metal core/shell nanowires that enables the efficient trapping of light on deep-subwavelength length scales for varied applications in photonics and optoelectronics.

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Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

Cited by 17 publications

References 39 publications

Gate-All-Around FETs: Nanowire and Nanosheet Structure

Gate-All-Around FETs: Nanowire and Nanosheet Structure

Si and Ge based metallic core/shell nanowires for nano-electronic device applications

Epitaxially Grown Silicon Nanowires with a Gold Molecular Adhesion Layer for Core/Shell Structures with Compact Mie and Plasmon Resonances

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