1996
DOI: 10.1103/physrevb.53.4734
|View full text |Cite
|
Sign up to set email alerts
|

Core level and valence-band studies of the (111)2×2 surfaces of InSb and InAs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

9
24
0

Year Published

2000
2000
2022
2022

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 49 publications
(33 citation statements)
references
References 26 publications
9
24
0
Order By: Relevance
“…The interaction between As and Co is different, evidenced by the return of the As 3d core level spectra to their [20,21]. The features A 1 and A 2 are not identified, but might be bulk derived since they reappear after thermal treatment.…”
Section: Discussionmentioning
confidence: 83%
See 1 more Smart Citation
“…The interaction between As and Co is different, evidenced by the return of the As 3d core level spectra to their [20,21]. The features A 1 and A 2 are not identified, but might be bulk derived since they reappear after thermal treatment.…”
Section: Discussionmentioning
confidence: 83%
“…A 3 , which appears after the deposition of Co, is due to the electrons in the metallic overlayer. On the A-side, S 2 was previously identified as a surface state by Olsson et al [20], whereas A 1 , was unidentified in their paper. A 1 reappears after heat treatment at the lower temperature together with the other bulk features, indicative of a bulk origin.…”
Section: Discussionmentioning
confidence: 95%
“…From the view point of the electron-counting model (ECM), which is the very powerful guiding principle to determine the stable surface structure in III-V semiconductors [4], it is strange that the 1  1 unreconstructed surface is stable, because the unreconstructed surface does not satisfy the ECM. The surface properties of InAs would be similar to those of GaAs, because for (0 0 1) and (1 1 1)A surfaces the stable reconstructions of InAs are the same as those of GaAs [5][6][7]. For GaAs(1 1 1)B surface, the STM observation shows that the stable surface structures are ffiffiffiffiffi 19 p  ffiffiffiffiffi 19 p reconstruction and 2  2 As-trimer reconstruction [8].…”
Section: Introductionmentioning
confidence: 78%
“…Recently, polar (1 1 1) III-V surfaces have attracted great interest as possible substrates for the growth of low-dimensional quantum structures [1], important for a number of potential applications, ranging from QD lasers and photodetectors, to single polarized photon sources. So far, InAs(1 1 1) A and B surfaces have been prepared using in situ epitaxial growth [2,3], ion sputtering followed by annealing [4,5], atomic hydrogen treatment [6], and various wet treatments [7,8]. The A face exhibits a (2 Â 2) reconstruction [3][4][5][6][7], while the B face exhibits (1 Â 1) or (2 Â 2) structures depending on the preparation technique [2,5].…”
Section: Introductionmentioning
confidence: 99%