“…Recently, polar (1 1 1) III-V surfaces have attracted great interest as possible substrates for the growth of low-dimensional quantum structures [1], important for a number of potential applications, ranging from QD lasers and photodetectors, to single polarized photon sources. So far, InAs(1 1 1) A and B surfaces have been prepared using in situ epitaxial growth [2,3], ion sputtering followed by annealing [4,5], atomic hydrogen treatment [6], and various wet treatments [7,8]. The A face exhibits a (2 Â 2) reconstruction [3][4][5][6][7], while the B face exhibits (1 Â 1) or (2 Â 2) structures depending on the preparation technique [2,5].…”