Semiconductor-based photocatalysis is an ideal method
for air purification
by eliminating nitrogen oxide (NO). However, sluggish carrier separation,
photocatalysts deactivation and incomplete oxidation are significant
bottlenecks for photocatalytic treatment of indoor pollutant NO. Herein,
ZnO with assorted structures is fabricated and undergoes further modification
for deliberate surface defect constructions. Utilized flux agents
during the synthesis provide a more feasible reducing atmosphere,
under which spontaneous generations of the surface vacancies become
easier, and gradient concentrations are precisely controlled. Photocatalyst
characterizations affirm the successful creation of surface defects,
which are further evaluated by solar-light-driven NO (ppb level) removal
investigations. Results showed that ZnO rich in oxygen vacancies (VO-rich ZnO) exhibited 5.43 and 1.63 times enhanced NO removal
with fewer toxic product NO2 formations than its counterparts
pristine and VO-poor ZnO, respectively. Importantly, with
higher VO on the unusual nonpolar facets, VO-rich ZnO does not only display enhanced NO conversion, but also
shows the unselective NO removal process by producing NO3
–. The plausible reaction mechanisms of promoted
NO conversions are further investigated based on the surface VO, well-positioned band structures, and enhanced carrier separations.
Results showed that the surface VO with gradient concentrations
are not only promoted carrier separation, but also facilitate molecular
oxygen activation, leading to the generations of strong oxidant superoxide
radicals (·O2
–), and contributing
to the enhanced improved efficiency. Adsorption of small molecules
(O2, H2O and NO) on the defective surface was
further investigated by density functional theory (DFT) calculations,
which validated the successful adsorption/activation of NO and O2, further contributed to the improved NO conversions.