2012
DOI: 10.1088/0957-4484/23/19/194001
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Copper oxide nanowires: a review of growth

Abstract: Cuprous oxide (Cu(2)O) and cupric oxide (CuO) nanowires have started playing important roles in energy conversion devices and optoelectronic devices. Although the desired advanced properties have been demonstrated, these materials cannot yet be produced in large-bulk quantities in order to bridge the technological transfer gap for wider use. In this respect, the quest for the most efficient synthesis process which yields not only large quantities but also high quality and advanced material properties continues… Show more

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Cited by 221 publications
(159 citation statements)
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References 92 publications
(159 reference statements)
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“…Interestingly, if the reaction temperature maintained at 60°C, the reaction time was only 10 min but the obtained Cu NWs had an average diameter of 85.14 nm and an average length of 33.39 lm. It has been shown in previous studies that heat is required to accelerate the formation of nanowires [16]. However, excessive heat has been shown to be the cause of formation of relatively short and thick Cu NWs [14].…”
Section: Resultsmentioning
confidence: 99%
“…Interestingly, if the reaction temperature maintained at 60°C, the reaction time was only 10 min but the obtained Cu NWs had an average diameter of 85.14 nm and an average length of 33.39 lm. It has been shown in previous studies that heat is required to accelerate the formation of nanowires [16]. However, excessive heat has been shown to be the cause of formation of relatively short and thick Cu NWs [14].…”
Section: Resultsmentioning
confidence: 99%
“…Quite often, carbon nanotubes, carbon fibers and other more expensive materials have been used as fillers [34] [35]. Cuprous oxide (Cu 2 O) and cupric oxide (CuO) are the two natural oxide of copper [36]. They are both semiconductors with band gaps of 2.0 eV and 1.2 eV respectively.…”
Section: Applicationsmentioning
confidence: 99%
“…[18][19][20][21][22] It should also be noted that hydrogen can have a similar role in growth of metal oxide nanostructures. [23][24][25][26][27][28][29][30][31][32] The H þ ions are randomly distributed over the simulation plane with the length and width of 44 lm; this plane is located at the sheath edge and is parallel to the substrate. The initial velocities of the ions are equal to the Bohm velocity.…”
Section: Simulationmentioning
confidence: 99%